Direct Bonding of Epitaxial GaAs Film on Si Substrate With Improved Optical Properties : Structure and Mechanical and Thermal Properties of Condensed Matter

スポンサーリンク

概要

• 論文の詳細を見る
• 2001-01-15

著者

• YU Guolin

  Nagoya Institute of Technology

• RAHMAN Md.

  Nagoya Institute of Technology

• SOGA Tetsuo

  Department of Frontier Materials, Nagoya Institute of Technology

• JIMBO Takashi

  Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology

• EBISU Hiroshi

  Department of Electrical and Computer Engineering, Nagoya Institute of Technology

• Jimbo T

  Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology

• Umeno M

  Department Of Electronic Engineering Chubu University

• Umeno Masayoshi

  Department Of Electronic And Computer Engineering Nagoya Institute Of Technology

• Umeno Masayoshi

  Department Of Electric And Computer Engineering Nagoya Institute Of Technology

• Umeno Masayoshi

  Department Of Electronic Mechanical Engineering Nagoya University

• Soga T

  Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology

• Soga Tetsuo

  Department Of Electronics Faculty Of Engineering Nagoya University

• Ebisu H

  Department Of Physics Nagoya Institute Of Technology

• Ebisu Hiroshi

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Umeno M

  Fukui Univ. Technol. Fukui Jpn

• Jimbo Takashi

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Umeno Masataka

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Umeno Masataka

  Graduate School Of Engineering Osaka University

• Soga T

  Nagoya Inst. Technol. Nagoya Jpn

• UMENO Masayoshi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

• Umeno Masayoshi

  Department Of Electronic Engineering Chubu University

• YU Guolin

  Research Centerfor Micro-Structure Devices, Nagoya Institute of Technology

• RAHMAN Md.

  venture Business Laboratory, Nagoya Institute of Technology

• Soga Takashi

  Central Research Laboratory Hitachi Limited

• Umeno M

  Department Of Management And Information Science Faculty Of Engineering Fukui University Of Technolo

• Rahman Md.mosaddeq-ur

  Nagoya Institute Of Technology

• Umeno M

  Nagoya Inst. Technology

• Soga Tetsuo

  Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466

関連論文

• Structural Comparison between Ge and GaAs Films Grown by Molecular Beam Epitaxy on Si Substrate : Short Note
• Direct Bonding of Epitaxial GaAs Film on Si Substrate With Improved Optical Properties : Structure and Mechanical and Thermal Properties of Condensed Matter
• Functionalized Carbon Nanotubes for Mixed Matrix Membrane
• Influence of Structure and C_ Composition on Properties of Blends and Bilayers of Organic Donor-Acceptor Polymer/C_ Photovoltaic Devices
• Boron-Incorporated Amorphous Carbon Films Deposited by Pulsed Laser Deposition : Semiconductors
• Fabrication of a TiO_2-Based Solid-State Cell with an Organic Polymer as a Sensitizer : Optical Properties of Condensed Matter
• Effect of Radio Frequency Power on the Properties of Hydrogenated Amorphous Carbon Films Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition
• Theoretical Studies on Hole Transport and the Effective Hall Factor in Cubic Phase of p-Type GaN
• Thermal Stress Relaxation in GaAs Layer on New Thin Si Layer over Porous Si Substrate Grown by Metalorganic Chemical Vapor Deposition
• Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers
• Barrier-Height-Enhanced n-GaN Schottky Photodiodes Using a Thin p-GaN Surface Layer
• Visible-Blind Metal-Semiconductor-Metal Photodetectors Based on Undoped AlGaN/GaN High Electron Mobility Transistor Structure
• Emission Properties of Electrodeless Argon Gas Discharge in VUV Region
• Vacuum Ultraviolet Light Source Using Electrodeless Discharge
• Vacuum Ultraviolet Detector
• Initial Condition and Calculation Method for the Numerical Simulation of LPE
• Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
• EPR Study of Monoclinic Centres in CsCdF_3 and CsCaF_3 Co-Doped with Gd^ and Na^+ Ions
• EPR Study of Tetragonal and Orthorhombic Fe^ Centres in Rb_2CdF_4 Crystals
• Evidence of Structural Phase Transition in K_2CdF_4 Derived from EPR Measurements for Cr^ Centres
• Growth of cupric oxide nanostructure by thermal oxidation of copper (シリコン材料・デバイス)
• An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (シリコン材料・デバイス)
• Growth of cupric oxide nanostructure by thermal oxidation of copper (電子デバイス)
• An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (電子デバイス)
• Growth of cupric oxide nanostructure by thermal oxidation of copper (電子部品・材料)
• An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (電子部品・材料)
• Effects of Al content on Zn_Mg_O Thin Films Deposited by Sol-Gel Spin Coating
• Effects of Homoepitaxial GaAs/GaAs and Heteroepitaxial GaAs/Si Solar Cells after 1MeV Electron Irradiation for Space Application
• Annealing Temperature Effects on Synthesis of n-TiO_2/dye/p-CuI Solid-State Solar Cells
• Effects of 1MeV Electron Irradiation on the Schottky Diode Characteristics of n-GaAs/Si
• Low-Energy Proton Irradiation Effects on GaAs/Si Solar Cell
• The physical and micro structural properties of PECVD grown amorphous carbon films on the contribution to n-C:P/p-Si solar cells
• The annealing temperature effects on the synthesis of n-TiO_2/dye/p-CuI solid state solar cells
• 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
• 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
• 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
• The Deposition of a-C : H Films by Pulsed Laser Ablation
• Characterization of Phosphorus-Doped Amorphous Carbon and Construction of n-Carbon/p-Silicon Heterojunction Solar Cells
• Photovoltaic Properties of Boron-Incorporated Amorphous Carbon on n-Si Heterojunction Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition Using Trimethylboron
• N/Ge Co-Implantation into GaN for N-Type Doping
• N/Ge Co-Implantation into GaN for N-Type Doping
• Anisotropic Properties of Photon Drag Effect in p-type Germanium
• Functionalized Carbon Nanotubes for Mixed Matrix Membrane
• Influence of Catalyst Preparation on Synthesis of Multi-Walled Carbon Nanotubes
• Morphological Control of Ion-Induced Carbon Nanofibers and Their Field Emission Properties
• Low-Temperature Fabrication of Ion-Induced Ge Nanostructures : Effect of Simultaneous Al Supply
• GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
• Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
• Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
• Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
• MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
• MOCVD Growth of GaAs_P_ on Si Substrate
• AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
• Mechnism of MOCVD Growth for GaAs and AlAs
• Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
• Properties of Pulsed-laser-Deposited CuI and Characteristics of Constructed Dye-Sensitized TiO_2|Dye|CuI Solid-State Photovoltaic Solar Cells
• Motion Detecting Artificial Retina Model by Two-Dimensional Multi-Layered Analog Electronic Circuits
• Realization of GaAS/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
• First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition
• AlGaAs/GaAs Laser Diodes with GaAs Islands Active Region on a Si Substrate with Higher Characteristic Temperature
• Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
• Etching Technique to Reveal Dislocations in Thin GaAs Films Grown on Si Substrates : Condensed Matter
• Diamond Synthesized at Room Temperature by Pulsed Laser Deposition in Vacuum
• Stress and Strain of GaAs on Si Grown by MOCVD Using Strained Superlattice Intermediate Layers and a Two-Step Growth Method
• Synthesis of Carbon Nanofibers from Carbon Particles by Ultrasonic Spray Pyrolysis of Ethanol
• Mechanical Property Characterization of Boron-Doped Silicon by Berkovich-Type Indenter : Semiconductors
• Polarized Reflectance Spectroscopy and Spectroscopic Ellipsomentry Determination of the Optical Anisotropy of Gallium nitride on Sapphire
• Effect of NaOCl-Polishing on Metal Organic Chemical Vapor Deposition grown GaAs Surface on Si Substrate by Spectroscopic Ellipsometry and Atomic Force Microscopy
• Valence-Band Discontinuity at the AIN/Si Interface
• Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD
• High-Temperature Behaviors of GaN Schottky Barrier Diode
• New Technique to Fabricate Stress-Relieved Reliable Lasers on Si Substrates
• Effects of Dislocation and Stress on Characteristics of GaAs-Based Laser Grown on Si by Metalorganic Chemical Vapor Deposition
• Back-Illuminated GaN Metal-Semiconductor-Metal UV Photodetector With High Internal Gain : Semiconductors
• Electrical Characteristics of Schottky Contacts on GaN and Al_Ga_N
• High-Mobility AlGaN/GaN Heterostructures Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
• Optical Absorption and Photoluminescence Studies of n-type GaN
• Photoluminescence Studies of Hydrogen-Passivated Al_Ga_As Grown on Si Substrate by Metalorganic Chemical Vapor Deposition
• GaN on Si Substrate with AlGaN/AlN Intermediate Layer
• Effects of H Plasma Passivation on the Optical and Electrical Properties of GaAs-on-Si
• Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy
• Selective-Area-Grown AlGaAs/GaAs Single Quantum Well Lasers on Si Substrates by Metalorganic Chemical Vapor Deposition
• GaN Metal-Semiconductor-Metal UV Photodetector with Recessed Electrodes : Semiconductors
• High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector
• Characteristics of a GaN Metal Semiconductor Field-Effect Transistor Grown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition
• Optical and Structural Quality of GaAs Epilayers from Gallium, Bismuth Mixed Solvents by Liquid Phase Epitaxy
• Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In_Ga_P Grown on Si SubStrate : Semiconductors
• Electrical Characteristics of GaAs Bonded to Si Using SeS_2 Technique
• Low Temperature Growth of GaAs on Si Substrate by Chemical Beam Epitaxy
• Hydrogen Plasma Passivation and Improvement of the Photovoltaic Properties of a GaAs Solar Cell Grown on Si Substrate
• A Modified Harmonic Oscillator Approximation Scheme for the Dielectric Constants of GaAs, InP and GaP
• Characterization of Strained GaP/Si Heterostructure by Spectroscopic Ellipsometry
• Rectifying I-V Characteristics of n-Type Fluorine Implanted a-C/p-Type Si Heterojunction Diodes
• Ion Beam Induced Effects in RF Plasma Chemical Vapor Deposition Deposited Hydrogenated Amorphous Carbon Thin Films
• GaAs/AlGaAs Single Quantum Well Optical Switch Fabricated on Si Substrate
• Two-Dimensional Growth of GaP on Si Substrates under High V/III Ratio by Metal Organic Vapor Phase Epitaxy
• Initial Growth Mechanism for GaAs and GaP on Si Substrate by Metalorganic Chemical Vapor Deposition
• High-Radiation Resistance of GaAs Solar Cell on Si Substrate Following 1 MeV Electron Irradiation
• Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS_2Treatment
• Synthesis of Iron Oxide Nanoparticles by Using Eucalyptus Globulus Plant Extract

もっと見る 閉じる

スポンサーリンク