Effects of 1MeV Electron Irradiation on the Schottky Diode Characteristics of n-GaAs/Si
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-10-15
著者
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SOGA Tetsuo
Department of Frontier Materials, Nagoya Institute of Technology
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JIMBO Takashi
Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology
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Jimbo T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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CHANDRASEKARAN Nallathambi
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology
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INUZUKA Yousuke
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology
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TAGUCHI Hironori
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology
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IMAIZUMI Mitsuru
Japan Aerospace Exploration Agency
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Jimbo T
Ulvac Inc. Shizuoka Jpn
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Shirata T.
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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