Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In_<0.49>Ga_<0.51>P Grown on Si SubStrate : Semiconductors

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-03-01

著者

• SOGA Tetsuo

  Department of Frontier Materials, Nagoya Institute of Technology

• UMENO Masayoshi

  Department of electrical and Computer Engineering, Nagoya Institute of Technology

• JIMBO Takashi

  Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology

• Jimbo T

  Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology

• Umeno M

  Department Of Electronic Engineering Chubu University

• Umeno Masayoshi

  Department Of Electronic And Computer Engineering Nagoya Institute Of Technology

• Umeno Masayoshi

  Department Of Electric And Computer Engineering Nagoya Institute Of Technology

• Umeno Masayoshi

  Department Of Electronic Mechanical Engineering Nagoya University

• Soga T

  Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology

• Soga Tetsuo

  Department Of Electronics Faculty Of Engineering Nagoya University

• Umeno M

  Fukui Univ. Technol. Fukui Jpn

• Jimbo Takashi

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Umeno Masataka

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Umeno Masataka

  Graduate School Of Engineering Osaka University

• Soga T

  Nagoya Inst. Technol. Nagoya Jpn

• WANG Gang

  Department of Dermatology of Xijing Hospital, Fourth Military Medical University

• Wang Gang

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Wang Gang

  Beijing Astronomical Observatory Chinese Academy Of Sciences

• Wang Gang

  Changchun Institute Of Optics Fine Mechanics And Physics Chinese Academy Of Sciences.

• Wang Gang

  Faculty Of Agriculture Shizuoka University

• Umeno Masayoshi

  Department Of Electronic Engineering Chubu University

• Soga Takashi

  Central Research Laboratory Hitachi Limited

• AKAHORI Kimiya

  Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology

• Umeno M

  Department Of Management And Information Science Faculty Of Engineering Fukui University Of Technolo

• Akahori Kimiya

  Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology

• Umeno M

  Nagoya Inst. Technology

• Wang Gang

  Department Of Bioengineering Faculty Of Engineering Kagoshima University

• Soga Tetsuo

  Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466

関連論文

• Direct Bonding of Epitaxial GaAs Film on Si Substrate With Improved Optical Properties : Structure and Mechanical and Thermal Properties of Condensed Matter
• Novel Low-Cost Solid-State Heterojunction Solar Cell Based on TiO_2 and Its Modification for lmproved Efficiency
• Functionalized Carbon Nanotubes for Mixed Matrix Membrane
• Influence of Structure and C_ Composition on Properties of Blends and Bilayers of Organic Donor-Acceptor Polymer/C_ Photovoltaic Devices
• Boron-Incorporated Amorphous Carbon Films Deposited by Pulsed Laser Deposition : Semiconductors
• Fabrication of a TiO_2-Based Solid-State Cell with an Organic Polymer as a Sensitizer : Optical Properties of Condensed Matter
• Effect of Radio Frequency Power on the Properties of Hydrogenated Amorphous Carbon Films Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition
• Theoretical Studies on Hole Transport and the Effective Hall Factor in Cubic Phase of p-Type GaN
• Thermal Stress Relaxation in GaAs Layer on New Thin Si Layer over Porous Si Substrate Grown by Metalorganic Chemical Vapor Deposition
• Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers
• Emission Properties of Electrodeless Argon Gas Discharge in VUV Region
• Vacuum Ultraviolet Light Source Using Electrodeless Discharge
• Vacuum Ultraviolet Detector
• Initial Condition and Calculation Method for the Numerical Simulation of LPE
• Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
• Growth of cupric oxide nanostructure by thermal oxidation of copper (シリコン材料・デバイス)
• An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (シリコン材料・デバイス)
• Growth of cupric oxide nanostructure by thermal oxidation of copper (電子デバイス)
• An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (電子デバイス)
• Growth of cupric oxide nanostructure by thermal oxidation of copper (電子部品・材料)
• An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (電子部品・材料)
• Effects of Al content on Zn_Mg_O Thin Films Deposited by Sol-Gel Spin Coating
• Effects of Homoepitaxial GaAs/GaAs and Heteroepitaxial GaAs/Si Solar Cells after 1MeV Electron Irradiation for Space Application
• Annealing Temperature Effects on Synthesis of n-TiO_2/dye/p-CuI Solid-State Solar Cells
• Effects of 1MeV Electron Irradiation on the Schottky Diode Characteristics of n-GaAs/Si
• Low-Energy Proton Irradiation Effects on GaAs/Si Solar Cell
• The physical and micro structural properties of PECVD grown amorphous carbon films on the contribution to n-C:P/p-Si solar cells
• The annealing temperature effects on the synthesis of n-TiO_2/dye/p-CuI solid state solar cells
• 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
• 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
• 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
• The Deposition of a-C : H Films by Pulsed Laser Ablation
• Characterization of Phosphorus-Doped Amorphous Carbon and Construction of n-Carbon/p-Silicon Heterojunction Solar Cells
• Photovoltaic Properties of Boron-Incorporated Amorphous Carbon on n-Si Heterojunction Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition Using Trimethylboron
• Effect of Growth Temperature on InGaAsP/GaAsP Expitaxial Growth
• Crosshatch Pattern on InGaAsP Layers Grown on GaAs_P_ Substrate by LPE
• Meltback of GaAs_P_ Substrate in LPE Growth of InGaAsP
• LPE Growth of In_ Ga_xAs_P_y on GaAs_P_
• Room Temperature Operation of Visible (λ=658.6 nm) InGaAsP DH Laser Diodes on GaAsP
• Visible InGaP / GaAsP Dual Wavelength Light Emitting Diodes
• New Wavelength-Demultiplexing InGaAsP/InP Photodiodes : III-4: III-V COMPOUND SOLAR CELLS AND DETECTORS
• Measurement of Diffusion Coefficient and Surface Recombination Velocity for p-InGaAsP Grown on InP
• InGaAsP/InP Native Oxide Stripe Lasers
• InGaAsP/InP Double-Heterostructure Photodiodes
• Brillouin Scattering in Sodium Nitrite
• Brillouin Scattering in Ca_2Sr(C_2H_5CO_2)_6
• Photoconductivity Due to Inter-Valence Band Transition in p-Type Germanium
• Anisotropic Properties of Photon Drag Effect in p-type Germanium
• Functionalized Carbon Nanotubes for Mixed Matrix Membrane
• Influence of Catalyst Preparation on Synthesis of Multi-Walled Carbon Nanotubes
• High-Efficiency Monolithic Three-Terminal GaAs/Si Tendem Solar Cells Fabricated by Metalorganic Chemical Vapor Deposition
• Morphological Control of Ion-Induced Carbon Nanofibers and Their Field Emission Properties
• Low-Temperature Fabrication of Ion-Induced Ge Nanostructures : Effect of Simultaneous Al Supply
• Photon-Drag Effect Due to the Transitions between Light-Hole Band and Split-Off Band in Ge
• Measurement of Subnanosecond Infra-Red Light Pulses by Photon-Drag Effect : Short Pulses of Light
• Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure : Structure and Mechanical and Thermal Properties of Condensed Matter
• Measurement of Surface Patterns by Using Interference of Diffraeted Laser Beam
• GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
• InGaAsP/InP Wavelength Division Solar Cells : II-3: NEW STRUCTURE AND ADVANCED MATERIAL SOLAR CELLS
• Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
• Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
• Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
• MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
• MOCVD Growth of GaAs_P_ on Si Substrate
• AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
• Mechnism of MOCVD Growth for GaAs and AlAs
• Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
• Ellipsometric Studies on Sputter-Damaged Layer in n-InP
• Properties of Pulsed-laser-Deposited CuI and Characteristics of Constructed Dye-Sensitized TiO_2|Dye|CuI Solid-State Photovoltaic Solar Cells
• First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition
• AlGaAs/GaAs Laser Diodes with GaAs Islands Active Region on a Si Substrate with Higher Characteristic Temperature
• Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
• Etching Technique to Reveal Dislocations in Thin GaAs Films Grown on Si Substrates : Condensed Matter
• Diamond Synthesized at Room Temperature by Pulsed Laser Deposition in Vacuum
• Stress and Strain of GaAs on Si Grown by MOCVD Using Strained Superlattice Intermediate Layers and a Two-Step Growth Method
• Synthesis of Carbon Nanofibers from Carbon Particles by Ultrasonic Spray Pyrolysis of Ethanol
• Polarized Reflectance Spectroscopy and Spectroscopic Ellipsomentry Determination of the Optical Anisotropy of Gallium nitride on Sapphire
• Effect of NaOCl-Polishing on Metal Organic Chemical Vapor Deposition grown GaAs Surface on Si Substrate by Spectroscopic Ellipsometry and Atomic Force Microscopy
• Simplified Dual Channel Optical Trarnsmission Using Integrated Light Emitters and Photodetectors
• Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD
• High-Temperature Behaviors of GaN Schottky Barrier Diode
• Suppression of Dark-Line Defect Growth in AlGaAs/InGaAs Single Quantum Well Lasers Grown on Si Substrates
• First Fabrication of a Reliable AlGaAs/GaAs LED on Si with Self-Assembled GaAs Islands Active Region
• Influences of Dark Line Defects on Characteristics of AlGaAs/GaAs Quantum Well Lasers Grown on Si Substrates
• First Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Wells Laser Grown on Si Substrate
• Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Well Laser Grown on Si Substrate
• Photoluminescence Studies of Hydrogen-Passivated Al_Ga_As Grown on Si Substrate by Metalorganic Chemical Vapor Deposition
• Effects of H Plasma Passivation on the Optical and Electrical Properties of GaAs-on-Si
• Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy
• Optical and Structural Quality of GaAs Epilayers from Gallium, Bismuth Mixed Solvents by Liquid Phase Epitaxy
• Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In_Ga_P Grown on Si SubStrate : Semiconductors
• Electrical Characteristics of GaAs Bonded to Si Using SeS_2 Technique
• Hydrogen Plasma Passivation and Improvement of the Photovoltaic Properties of a GaAs Solar Cell Grown on Si Substrate
• Rectifying I-V Characteristics of n-Type Fluorine Implanted a-C/p-Type Si Heterojunction Diodes
• Ion Beam Induced Effects in RF Plasma Chemical Vapor Deposition Deposited Hydrogenated Amorphous Carbon Thin Films
• Two-Dimensional Growth of GaP on Si Substrates under High V/III Ratio by Metal Organic Vapor Phase Epitaxy
• Initial Growth Mechanism for GaAs and GaP on Si Substrate by Metalorganic Chemical Vapor Deposition
• High-Radiation Resistance of GaAs Solar Cell on Si Substrate Following 1 MeV Electron Irradiation
• Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS_2Treatment
• Synthesis of Iron Oxide Nanoparticles by Using Eucalyptus Globulus Plant Extract

もっと見る 閉じる

スポンサーリンク