Low-Energy Proton Irradiation Effects on GaAs/Si Solar Cell
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2004-10-01
著者
-
SOGA Tetsuo
Department of Frontier Materials, Nagoya Institute of Technology
-
OHSHIMA Takeshi
Japan Atomic Energy Research Institute
-
JIMBO Takashi
Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology
-
Jimbo T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
-
CHANDRASEKARAN Nallathambi
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology
-
INUZUKA Yousuke
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology
-
TAGUCHI Hironori
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology
-
IMAIZUMI Mitsuru
Japan Aerospace Exploration Agency
-
Shirata T.
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
関連論文
- Direct Bonding of Epitaxial GaAs Film on Si Substrate With Improved Optical Properties : Structure and Mechanical and Thermal Properties of Condensed Matter
- Functionalized Carbon Nanotubes for Mixed Matrix Membrane
- InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
- Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
- Influence of Structure and C_ Composition on Properties of Blends and Bilayers of Organic Donor-Acceptor Polymer/C_ Photovoltaic Devices
- Boron-Incorporated Amorphous Carbon Films Deposited by Pulsed Laser Deposition : Semiconductors
- Fabrication of a TiO_2-Based Solid-State Cell with an Organic Polymer as a Sensitizer : Optical Properties of Condensed Matter
- Effect of Radio Frequency Power on the Properties of Hydrogenated Amorphous Carbon Films Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition
- Theoretical Studies on Hole Transport and the Effective Hall Factor in Cubic Phase of p-Type GaN
- Thermal Stress Relaxation in GaAs Layer on New Thin Si Layer over Porous Si Substrate Grown by Metalorganic Chemical Vapor Deposition
- Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers
- Barrier-Height-Enhanced n-GaN Schottky Photodiodes Using a Thin p-GaN Surface Layer
- Visible-Blind Metal-Semiconductor-Metal Photodetectors Based on Undoped AlGaN/GaN High Electron Mobility Transistor Structure
- Emission Properties of Electrodeless Argon Gas Discharge in VUV Region
- Vacuum Ultraviolet Light Source Using Electrodeless Discharge
- Vacuum Ultraviolet Detector
- Initial Condition and Calculation Method for the Numerical Simulation of LPE
- Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
- Growth of cupric oxide nanostructure by thermal oxidation of copper (シリコン材料・デバイス)
- An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (シリコン材料・デバイス)
- Growth of cupric oxide nanostructure by thermal oxidation of copper (電子デバイス)
- An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (電子デバイス)
- Growth of cupric oxide nanostructure by thermal oxidation of copper (電子部品・材料)
- An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (電子部品・材料)
- Effects of Al content on Zn_Mg_O Thin Films Deposited by Sol-Gel Spin Coating
- Effects of Homoepitaxial GaAs/GaAs and Heteroepitaxial GaAs/Si Solar Cells after 1MeV Electron Irradiation for Space Application
- Annealing Temperature Effects on Synthesis of n-TiO_2/dye/p-CuI Solid-State Solar Cells
- Effects of 1MeV Electron Irradiation on the Schottky Diode Characteristics of n-GaAs/Si
- Low-Energy Proton Irradiation Effects on GaAs/Si Solar Cell
- The physical and micro structural properties of PECVD grown amorphous carbon films on the contribution to n-C:P/p-Si solar cells
- The annealing temperature effects on the synthesis of n-TiO_2/dye/p-CuI solid state solar cells
- 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
- 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
- 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
- The Deposition of a-C : H Films by Pulsed Laser Ablation
- Characterization of Phosphorus-Doped Amorphous Carbon and Construction of n-Carbon/p-Silicon Heterojunction Solar Cells
- Photovoltaic Properties of Boron-Incorporated Amorphous Carbon on n-Si Heterojunction Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition Using Trimethylboron
- N/Ge Co-Implantation into GaN for N-Type Doping
- N/Ge Co-Implantation into GaN for N-Type Doping
- Anisotropic Properties of Photon Drag Effect in p-type Germanium
- A WSi/TiN/Au Gate Self-Aligned GaAs MESFET with Selectively Grown n^+-Layer using MOCVD
- Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions
- Functionalized Carbon Nanotubes for Mixed Matrix Membrane
- Anomalous Increase in Effective Channel Mobility on Gamma-Irradiated p-Channel SiC Metal-Oxide-Semiconductor Field-Effect Transistors Containing Step Bunching
- Influence of Catalyst Preparation on Synthesis of Multi-Walled Carbon Nanotubes
- Morphological Control of Ion-Induced Carbon Nanofibers and Their Field Emission Properties
- Low-Temperature Fabrication of Ion-Induced Ge Nanostructures : Effect of Simultaneous Al Supply
- GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
- Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
- Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
- Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
- MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
- MOCVD Growth of GaAs_P_ on Si Substrate
- AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
- Mechnism of MOCVD Growth for GaAs and AlAs
- Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
- Properties of Pulsed-laser-Deposited CuI and Characteristics of Constructed Dye-Sensitized TiO_2|Dye|CuI Solid-State Photovoltaic Solar Cells
- Generation of Interface Traps and Oxide-Trapped Charge in 6H-SiC Metal-Oxide-Semiconductor Transistors by Gamma-Ray Irradiation
- Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
- Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
- Motion Detecting Artificial Retina Model by Two-Dimensional Multi-Layered Analog Electronic Circuits
- Realization of GaAS/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
- First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition
- AlGaAs/GaAs Laser Diodes with GaAs Islands Active Region on a Si Substrate with Higher Characteristic Temperature
- Annealing Enhancement Effect by Light Illumination on Proton Irradiated Cu(In,Ga)Se_2 Thin-Film Solar Cells : Nuclear Science, Plasmas, and Electric Discharges
- Radiation Resistant Low Bandgap InGaASP Solar Cell for Multi-Junction Solar Cells : Semiconductors
- Investigation of Vacancy-Type Defects in P^+-Implanted 6H-SiC Using Monoenergetic Positron Beams
- The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide
- Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
- Etching Technique to Reveal Dislocations in Thin GaAs Films Grown on Si Substrates : Condensed Matter
- Diamond Synthesized at Room Temperature by Pulsed Laser Deposition in Vacuum
- Stress and Strain of GaAs on Si Grown by MOCVD Using Strained Superlattice Intermediate Layers and a Two-Step Growth Method
- Synthesis of Carbon Nanofibers from Carbon Particles by Ultrasonic Spray Pyrolysis of Ethanol
- Mechanical Property Characterization of Boron-Doped Silicon by Berkovich-Type Indenter : Semiconductors
- Polarized Reflectance Spectroscopy and Spectroscopic Ellipsomentry Determination of the Optical Anisotropy of Gallium nitride on Sapphire
- A Super Thin Film Transistor in Advanced Poly Si Films
- Low Temperature Polysilicon Super-Thin-Film Transistor (LSFT)
- 8" Uniform Electron Cyclotron Resonance Plasma Source Using a Circular TE_ Mode Microwave
- Valence-Band Discontinuity at the AIN/Si Interface
- Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD
- High-Temperature Behaviors of GaN Schottky Barrier Diode
- New Technique to Fabricate Stress-Relieved Reliable Lasers on Si Substrates
- Effects of Dislocation and Stress on Characteristics of GaAs-Based Laser Grown on Si by Metalorganic Chemical Vapor Deposition
- Photoluminescence Studies of Hydrogen-Passivated Al_Ga_As Grown on Si Substrate by Metalorganic Chemical Vapor Deposition
- Effects of H Plasma Passivation on the Optical and Electrical Properties of GaAs-on-Si
- Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy
- Optical and Structural Quality of GaAs Epilayers from Gallium, Bismuth Mixed Solvents by Liquid Phase Epitaxy
- Effects of Electron Irradiation on CuInS_2 Crystals
- Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In_Ga_P Grown on Si SubStrate : Semiconductors
- Electrical Characteristics of GaAs Bonded to Si Using SeS_2 Technique
- Hydrogen Plasma Passivation and Improvement of the Photovoltaic Properties of a GaAs Solar Cell Grown on Si Substrate
- Grain Growth and Conductive Characteristics of Super Thin Polysilicon Films by Oxidation
- Rectifying I-V Characteristics of n-Type Fluorine Implanted a-C/p-Type Si Heterojunction Diodes
- Ion Beam Induced Effects in RF Plasma Chemical Vapor Deposition Deposited Hydrogenated Amorphous Carbon Thin Films
- Two-Dimensional Growth of GaP on Si Substrates under High V/III Ratio by Metal Organic Vapor Phase Epitaxy
- Initial Growth Mechanism for GaAs and GaP on Si Substrate by Metalorganic Chemical Vapor Deposition
- High-Radiation Resistance of GaAs Solar Cell on Si Substrate Following 1 MeV Electron Irradiation
- Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS_2Treatment
- Temporal Donor Generation in Undoped Hydrogenated Amorphous Silicon Induced by Swift Proton Bombardment
- Synthesis of Iron Oxide Nanoparticles by Using Eucalyptus Globulus Plant Extract