Annealing Enhancement Effect by Light Illumination on Proton Irradiated Cu(In,Ga)Se_2 Thin-Film Solar Cells : Nuclear Science, Plasmas, and Electric Discharges

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-07-01

著者

• ITOH Hisayoshi

  Japan Atomic Energy Research Institute

• Itoh Hisayoshi

  Japan Atomic Energy Agency

• OHSHIMA Takeshi

  Japan Atomic Energy Research Institute

• Itoh Haruo

  Chiba Institute Of Technology

• Matsuda Satoru

  The Institute Of Scientific And Industrial Research Osaka University

• Matsuda S‐p

  Hitachi Research Laboratory Hitachi Ltd.

• Matsuda Shimpei

  Hitachi Research Laboratory Of Hitachi Ltd.

• KUSHIYA Katsumi

  Showa Shell Sekiyu K.K. Central R&D Lab.

• MATSUDA Sumio

  National Space Development Agency of Japan (NASDA)

• KAWAKITA Shirou

  National Space Development Agency of Japan

• IMAIZUMI Mitsuru

  National Space Development Agency of Japan

• YAMAGUCHI Masafumi

  Toyota Technological Institute

• Matsuda Seisuke

  Faculty Of Technology Tokyo Universily Of Agriculture And Technology:(present Address) Olympus Optic

• Yamaguchi Masakazu

  Research And Development Center Toshiba Corporation

• Itoh H

  Chiba Institute Of Technology

• Yamaguchi M

  Toyota Technological Inst. Nagoya Jpn

• Matsuda Sumio

  National Space Development Agency Of Japan

• Ohshima T

  Oki Electric Ind. Co. Ltd. Tokyo Jpn

• Imaizumi M

  National Space Development Agency Of Japan

• Ohshima T

  Japan Atomic Energy Res. Inst. Takasaki Jpn

• Kushiya Katsumi

  Showa Shell Sekiyu K.k Central R&d Laboratory (arl)

• Ohshima Takeshi

  Japan Atomic Energy Agency

• KUSHIYA Katsumi

  Showa Shell Sekiyu K. K., Central R & D Laboratory

関連論文

• Gamma Radiation Effects on the Ohmic Contact of AlGaN/GaN HEMTs
• InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
• Ionized Cluster Beam Deposition of Polycrystalline Thin Films of CuInSe_2
• Effect of Thermal Treatments on Fe^-Related Absorption and Infrared Photoluminescence Spectra of CuGaS_2
• Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
• Low-Energy Proton Irradiation Effects on GaAs/Si Solar Cell
• Neutron Diffraction Study on the Crystal Orientation of Y-Ba-Cu-O Superconducting Material Aligned in the Magnetic Field
• Neutron Diffraction Study on Preferred Orientation of Ag-Sheathed Y-Ba-Cu-O Superconductor Tape with J_c=1000-3000 A / cm^2 : Electrical Properties of Condensed Matter
• Degradation by Mechanical Grinding and Recovery by Annealing in the Superconducting Phases of the Bi-Pb-Sr-Ca-Cu-O System
• Formation of the High-T_c Phase in Rapidly Quenched Bi-Pb-Sr-Ca-Cu-O Ceramics
• Properties of a Fluorine-Doped Y-Ba-Cu-Oxide Superconductor Prepared by Hot-Pressing
• Dopant Effects on the Superconductivity in the Bi-Sr-Ca-Cu-O System
• Comparison of Transport Properties between Tl-(1223) and Tl-(2223) Phases of Tl-Ba-Ca-Cu-O Systems
• Magnetization and Anisotropy in Single Crystals of Tl-(1223) Phase of Tl-Sr-Ca-Cu-O System
• The Anisotropy of Transport Critical Current Densities in Tl_2Ba_2Ca_2Cu_3O_x Thin Films under Magnetic Fields up to 20 T
• Properties of Tl_2Ba_2Ca_2Cu_3O_x Thin Films with a Critical Temperature of 122 K Prepared by Excimer Laser Ablation
• Phase Transition in YBa_2Cu_3O_ through Hydrogen Ion Implantation : Electrical Properties of Condensed Matter
• Relationship between Crystal Structures and Solid Solution of Tl-Sr-Ca-Cu-O and Tl-Ba-Ca-Cu-O Superconductors
• Superconductivity of Tl-Sr-Ca-Cu-O System in Relation to Tl-Ba-Ca-Cu-O and Bi-Sr-Ca-Cu-O System : Electrical Properties of Condensed Matter
• Magnetic Properties of the (1223) Phase of Tl-Sr-Ca-Cu-O Superconductors with Strong Pinning in Liquid Nitrogen
• Existence of Superconducting States Above 30 K in Sr-V-O Systems Doped with Various Elements
• Crystalline Structure and Superconducting Properties of Rapidly Quenched BiSrCaCu_2O_x Ceramics : Electrical Properties Condensed Matter
• A WSi/TiN/Au Gate Self-Aligned GaAs MESFET with Selectively Grown n^+-Layer using MOCVD
• Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions
• Anomalous Increase in Effective Channel Mobility on Gamma-Irradiated p-Channel SiC Metal-Oxide-Semiconductor Field-Effect Transistors Containing Step Bunching
• Developmemt of High-Efficiency CuIn_xGa_Se_2 Thin-Film Solar Cells by Selenization with Elemental Se Vapor in Vacuum
• Improvement of Optical Properties of Multilayer Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices on GaAs(311)A
• Polycrystalline Cu(InGa)Se_2 Thin-Film Solar Cells with ZnSe Buffer Layers
• Radiation Test of Silicon Solar Cells for Space Application : I-1: SILICON SOLAR CELLS (1) : Ion Implantation & Radiation damage
• Evaluation of Transient Current in Si PIN Photodiode Induced by High-Energy Charged Particles
• Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their
• Measurements of the Depth Profile of the Refractive Indices in Oxide Films on SiC by Spectroscopic Ellipsometry
• Generation of Interface Traps and Oxide-Trapped Charge in 6H-SiC Metal-Oxide-Semiconductor Transistors by Gamma-Ray Irradiation
• Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
• Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
• Annealing Enhancement Effect by Light Illumination on Proton Irradiated Cu(In,Ga)Se_2 Thin-Film Solar Cells : Nuclear Science, Plasmas, and Electric Discharges
• Radiation Resistant Low Bandgap InGaASP Solar Cell for Multi-Junction Solar Cells : Semiconductors
• Effects of Annealing on Type Converted Si and Space Solar Cells Irradiated with Heavy Fluence 1 MeV Electrons
• Analysis of Radiation Damage to Si Solar Cells under High-Fluence Electron Irradiation
• Optimization of Al-doped ZnO Window Layers for Large-Area Cu(InGa)Se_2-Based Modules by RF/DC/DC Multiple Magnetron Sputtering
• Investigation of Vacancy-Type Defects in P^+-Implanted 6H-SiC Using Monoenergetic Positron Beams
• The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide
• Observation of VUV Emission Spectra from DC Positive Corona Discharge
• Luminescence from Fluorescent Material Excited by Piezoelectric Transformer
• Luminous Phenomenon of Silent Discharge Using a Piezoelectric Transformer
• Effects of Cleavage on Local Cross-Sectional Stress Distribution in Trench Isolation Structure
• Effects of Cleavage on Local Cross-Sectional Stress Distribution in Trench Isolation Structure
• Magnetic Field Dependence of Critical Current Density of Polycrystalline Tl-2223 Wire
• The Melt Process of Tl-Ba(Sr)-Ca-Cu-O Tape-Shaped Wire
• A Super Thin Film Transistor in Advanced Poly Si Films
• Low Temperature Polysilicon Super-Thin-Film Transistor (LSFT)
• 8" Uniform Electron Cyclotron Resonance Plasma Source Using a Circular TE_ Mode Microwave
• Characteristics of Alpha-Radiation-Induced Deep Level Defects in p-Type InP Grown by Metal-Organic Chemical Vapor Deposition
• Effects of Hydrogen Ion Implantation on Superconductivity in YBa_2Cu_3O_ : Electrical Properties of Condensed Matter
• Development of Polycrystalline Culn_xGa_Se_2 Thin-Film Solar Cells with Band Gap of 1.3 to 1.5 eV
• Ag-Sheathed Tl-Ba-Ca-Cu-O Superconductor Tape with T_c≈120 K : Electrical Properties of Condensed Matter
• Effects of Electron Irradiation on CuInS_2 Crystals
• Fabrication of Thin-Film Polycrystalline Silicon Solar Cells by Silane-Gas-Free Process Using Aluminum-Induced Crystallization
• Nitrogen Related Electron Trap with High Capture Cross Section in n-Type GaAsN Grown by Chemical Beam Epitaxy
• In situ Real-Time X-ray Reciprocal Space Mapping during InGaAs/GaAs Growth for Understanding Strain Relaxation Mechanisms
• Investigation of High-Efficiency InGaP/GaAs Tandem Solar Cells under Concentration Operation
• Two-Terminal Monolithic In_Ga_P/GaAs Tandem Solar Cells with a High Conversion Efficiency of Over 30%
• Deep Level Transient Spectroscopy Analysis of 10MeV Proton and 1MeV Electron Irradiation-Induced Defects in p-InGaP and InGaP-based Solar Cells
• Radiation Resistance of InP-Related Materials
• 1.3-1.6-μm-Wavelength Quantum Dots Self-Formed in GaAs/InAs Short-Period Superlattices Grown on InP (411)A Substrates : Semiconductors
• Grain Growth and Conductive Characteristics of Super Thin Polysilicon Films by Oxidation
• Analysis of Photovoltaic Properties of C_60-Si Heterojunction Solar Cells
• Self-Aligned Formation of Porous Silicon Membranes Using Si Diaphragm Structures : Instrumentation, Measurement, and Fabrication Technology
• Growth Rate and Crystallinity of Nanocrystalline Silicon Film Grown by Electron Beam Excited Plasma Chemical Vapor Deposition
• InP Solar Cells and their Flight Experiments
• Evaluation of Hole Traps in 10-MeV Proton-Irradiated p-Type Silicon from Hall-Effect Measurements
• Application of Stacked ZnO Films as a Window Layer to Cu(InGa)Se_2-Based Thin-Film Modules
• Stabilization of PN Heterojunetion between Cu(IhGa)Se_2 Thin-Film Absorber and ZnO Window with Zn(O, S, OH)_x Buffer
• Application of Zn-Compound Buffer Layer for Polycrystalline CuInSe_2-Based Thin-Film Solar Cells
• Theoretical Optimization of Base Doping Concentration for Radiation Resistance of InGaP Subcells of InGaP/GaAs/Ge Based on Minority-Carrier Lifetime
• Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films
• Numerical Analysis for Radiation Resistant InGaP Solar Cell
• High-Radiation Resistance of GaAs Solar Cell on Si Substrate Following 1 MeV Electron Irradiation
• Low Dielectric Constant Insulator Formed by Downstream Plasma CVD at Room Temperature Using TMS/O_2
• Analysis of Heteroepitaxial AlGaAs/Si Tandem Solar Cell for Concentrator Applications
• Fabrication of GaAs/GaInNAs Heterojunction Solar Cells Applicable To High-Efficiency Multi-junction Tandem Structures
• Temporal Donor Generation in Undoped Hydrogenated Amorphous Silicon Induced by Swift Proton Bombardment
• Effect of Base Doping Concentration on Radiation-Resistance for GaAs Sub-Cells in InGaP/GaAs/Ge
• Fabrication of Ag-Sheathed Ba-Y-Cu Oxide Superconductor Tape : Electrical Properties of Condensed Matter
• Characterization of Light Element Impurities in Ultrathin Silicon-on-Insulator Layers by Luminescence Activation Using Electron Irradiation
• Si Substrate Suitable for Radiation-Resistant Space Solar Cells
• Wide-Angle Antireflection Effect of Subwavelength Structures for Solar Cells
• Study on Iron Distribution and Electrical Activities at Grain Boundaries in Polycrystalline Silicon Substrate for Solar Cells
• Fabrication of Thin-Film Polycrystalline Silicon Solar Cells by Silane-Gas-Free Process Using Aluminum-Induced Crystallization
• Structural and Molecular Changes of C Thin Films with Incorporated Magnesium Atoms (Special Issue : Solid State Devices and Materials (2))
• Effect of Thermal Stress on a N-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
• Observation of In-Plane Asymmetric Strain Relaxation during Crystal Growth and Growth Interruption in InGaAs/GaAs(001)
• Origin Investigation of a Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
• Crystal Structures of Copper–Phthalocyanine on C60(111) Surface Grown by Molecular Beam Epitaxy
• Effects of Residual Carbon and Hydrogen Atoms on Electrical Property of GaAsN Films Grown by Chemical Beam Epitaxy
• Chemical Beam Epitaxy of GaAsN Thin Films with Monomethylhydrazine as N Source
• Radiation Resistance of Wide Band Gap $n^{+}/ p$ AlInGaP Solar Cell for High-Efficient Multijunction Space Solar Cells
• Carbon Reduction in GaAsN Thin Films by Flow-Rate-Modulated Chemical Beam Epitaxy
• Properties of a Nitrogen-Related Hole Trap Acceptor-Like State in p-Type GaAsN Grown by Chemical Beam Epitaxy
• Analysis of Anomalous Degradation of Cu(In,Ga)Se2 Thin-Film Solar Cells Irradiated with Protons

もっと見る 閉じる

スポンサーリンク