YAMAGUCHI Masafumi | Toyota Technological Institute

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著作論文

Annealing Enhancement Effect by Light Illumination on Proton Irradiated Cu(In,Ga)Se_2 Thin-Film Solar Cells : Nuclear Science, Plasmas, and Electric Discharges
Radiation Resistant Low Bandgap InGaASP Solar Cell for Multi-Junction Solar Cells : Semiconductors
Effects of Annealing on Type Converted Si and Space Solar Cells Irradiated with Heavy Fluence 1 MeV Electrons
Analysis of Radiation Damage to Si Solar Cells under High-Fluence Electron Irradiation
Characteristics of Alpha-Radiation-Induced Deep Level Defects in p-Type InP Grown by Metal-Organic Chemical Vapor Deposition
Fabrication of Thin-Film Polycrystalline Silicon Solar Cells by Silane-Gas-Free Process Using Aluminum-Induced Crystallization
Nitrogen Related Electron Trap with High Capture Cross Section in n-Type GaAsN Grown by Chemical Beam Epitaxy
In situ Real-Time X-ray Reciprocal Space Mapping during InGaAs/GaAs Growth for Understanding Strain Relaxation Mechanisms
Investigation of High-Efficiency InGaP/GaAs Tandem Solar Cells under Concentration Operation
Two-Terminal Monolithic In_Ga_P/GaAs Tandem Solar Cells with a High Conversion Efficiency of Over 30%
Deep Level Transient Spectroscopy Analysis of 10MeV Proton and 1MeV Electron Irradiation-Induced Defects in p-InGaP and InGaP-based Solar Cells
Radiation Resistance of InP-Related Materials
Analysis of Photovoltaic Properties of C_60-Si Heterojunction Solar Cells
Self-Aligned Formation of Porous Silicon Membranes Using Si Diaphragm Structures : Instrumentation, Measurement, and Fabrication Technology
Growth Rate and Crystallinity of Nanocrystalline Silicon Film Grown by Electron Beam Excited Plasma Chemical Vapor Deposition
InP Solar Cells and their Flight Experiments
Theoretical Optimization of Base Doping Concentration for Radiation Resistance of InGaP Subcells of InGaP/GaAs/Ge Based on Minority-Carrier Lifetime
Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films
Numerical Analysis for Radiation Resistant InGaP Solar Cell
Analysis of Heteroepitaxial AlGaAs/Si Tandem Solar Cell for Concentrator Applications
Fabrication of GaAs/GaInNAs Heterojunction Solar Cells Applicable To High-Efficiency Multi-junction Tandem Structures
Effect of Base Doping Concentration on Radiation-Resistance for GaAs Sub-Cells in InGaP/GaAs/Ge
Wide-Angle Antireflection Effect of Subwavelength Structures for Solar Cells
Study on Iron Distribution and Electrical Activities at Grain Boundaries in Polycrystalline Silicon Substrate for Solar Cells
Fabrication of Thin-Film Polycrystalline Silicon Solar Cells by Silane-Gas-Free Process Using Aluminum-Induced Crystallization
Structural and Molecular Changes of C Thin Films with Incorporated Magnesium Atoms (Special Issue : Solid State Devices and Materials (2))
Effect of Thermal Stress on a N-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
Observation of In-Plane Asymmetric Strain Relaxation during Crystal Growth and Growth Interruption in InGaAs/GaAs(001)
Origin Investigation of a Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
Crystal Structures of Copper–Phthalocyanine on C60(111) Surface Grown by Molecular Beam Epitaxy
Effects of Residual Carbon and Hydrogen Atoms on Electrical Property of GaAsN Films Grown by Chemical Beam Epitaxy
Chemical Beam Epitaxy of GaAsN Thin Films with Monomethylhydrazine as N Source
Radiation Resistance of Wide Band Gap $n^{+}/ p$ AlInGaP Solar Cell for High-Efficient Multijunction Space Solar Cells
Carbon Reduction in GaAsN Thin Films by Flow-Rate-Modulated Chemical Beam Epitaxy
Properties of a Nitrogen-Related Hole Trap Acceptor-Like State in p-Type GaAsN Grown by Chemical Beam Epitaxy
Erratum: ``Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films''
III--V--N Materials for Super-High Efficiency Multi Junction Solar Cells

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