Effect of Thermal Stress on a N-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
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概要
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Isochronal and isothermal annealing treatments were carried out on GaAsN films grown by chemical beam epitaxy to clarify the evolution of a nonradiative recombination center, at an average energy level of 0.33 eV below the conduction band minimum of the alloy. This lattice defect showed a strong persistence during post-thermal annealing even under critical annealing conditions. By considering as-grown samples as references and after optimizing the temperature and time of annealing, the trapping density of this recombination center could be reduced to one-half. Since the origin of this N-related recombination center was tentatively considered as the split interstitial (N--As)\text{As, we suggest that the evolution of its density could be explained in great part to the diffusion behavior of As atoms during thermal stress.
- 2012-02-25
著者
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YAMAGUCHI Masafumi
Toyota Technological Institute
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Kojima Nobuaki
Toyota Technological Institute
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BOUZAZI Boussairi
Toyota Technological Institute
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Ohshita Yoshio
Toyota Technological Inst. Nagoya Jpn
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