Effect of surface morphology on the density of energy states in GaAsN grown by chemical beam epitaxy

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概要

• 論文の詳細を見る
• Institute of Physicsの論文
• 2014-02-14

著者

• BOUZAZI Boussairi

  Toyota Technological Institute

関連論文

• Nitrogen Related Electron Trap with High Capture Cross Section in n-Type GaAsN Grown by Chemical Beam Epitaxy
• Effect of Thermal Stress on a N-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
• Origin Investigation of a Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
• Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
• Properties of a Nitrogen-Related Hole Trap Acceptor-Like State in p-Type GaAsN Grown by Chemical Beam Epitaxy
• III--V--N Materials for Super-High Efficiency Multi Junction Solar Cells
• Effect of surface morphology on the density of energy states in GaAsN grown by chemical beam epitaxy

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