Properties of a Nitrogen-Related Hole Trap Acceptor-Like State in p-Type GaAsN Grown by Chemical Beam Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
The properties of a nitrogen (N)-related hole trap HC2, located approximately 0.15 eV above the valence band maximum of GaAsN, and their relationship with the density of ionized acceptors ($N_{\text{A}}$) in p-type GaAsN grown by chemical beam epitaxy are investigated using deep level transient spectroscopy and on the basis of the temperature dependence of the junction capacitance. At room temperature, $N_{\text{A}}$ is found to show a linear dependence on N concentration under N- and H-rich growth conditions. Furthermore, a N-dependent sigmoid increase in junction capacitance is observed in a specific temperature range from 70 to 100 K, which is the same as in the case where HC2 is recorded. Such behavior is explained by the thermal ionization of HC2, whose density affects in great part the magnitude order of $N_{\text{A}}$, essentially for a N concentration higher than 0.15%. Concerning its origin, HC2 is strongly considered to act as N–H related acceptor state.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-12-25
著者
-
YAMAGUCHI Masafumi
Toyota Technological Institute
-
Kojima Nobuaki
Toyota Technological Institute
-
BOUZAZI Boussairi
Toyota Technological Institute
-
SUZUKI Hidetoshi
Toyota Technological Institute
-
Ohshita Yoshio
Toyota Technological Inst. Nagoya Jpn
関連論文
- Annealing Enhancement Effect by Light Illumination on Proton Irradiated Cu(In,Ga)Se_2 Thin-Film Solar Cells : Nuclear Science, Plasmas, and Electric Discharges
- Radiation Resistant Low Bandgap InGaASP Solar Cell for Multi-Junction Solar Cells : Semiconductors
- Effects of Annealing on Type Converted Si and Space Solar Cells Irradiated with Heavy Fluence 1 MeV Electrons
- Analysis of Radiation Damage to Si Solar Cells under High-Fluence Electron Irradiation
- Characteristics of Alpha-Radiation-Induced Deep Level Defects in p-Type InP Grown by Metal-Organic Chemical Vapor Deposition
- Fabrication of Thin-Film Polycrystalline Silicon Solar Cells by Silane-Gas-Free Process Using Aluminum-Induced Crystallization
- Nitrogen Related Electron Trap with High Capture Cross Section in n-Type GaAsN Grown by Chemical Beam Epitaxy
- In situ Real-Time X-ray Reciprocal Space Mapping during InGaAs/GaAs Growth for Understanding Strain Relaxation Mechanisms
- Investigation of High-Efficiency InGaP/GaAs Tandem Solar Cells under Concentration Operation
- Two-Terminal Monolithic In_Ga_P/GaAs Tandem Solar Cells with a High Conversion Efficiency of Over 30%
- Deep Level Transient Spectroscopy Analysis of 10MeV Proton and 1MeV Electron Irradiation-Induced Defects in p-InGaP and InGaP-based Solar Cells
- Radiation Resistance of InP-Related Materials
- Shallow Carrier Trap Levels in GaAsN Investigated by Photoluminescence
- Analysis of Photovoltaic Properties of C_60-Si Heterojunction Solar Cells
- Self-Aligned Formation of Porous Silicon Membranes Using Si Diaphragm Structures : Instrumentation, Measurement, and Fabrication Technology
- Composition Control of Ni Silicide by Chemical Vapor Deposition Using Ni(PF3)4 and Si3H8
- Ni Thin Film Deposition from Tetrakistrifluorophosphine-Nickel
- Growth Rate and Crystallinity of Nanocrystalline Silicon Film Grown by Electron Beam Excited Plasma Chemical Vapor Deposition
- InP Solar Cells and their Flight Experiments
- Theoretical Optimization of Base Doping Concentration for Radiation Resistance of InGaP Subcells of InGaP/GaAs/Ge Based on Minority-Carrier Lifetime
- Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films
- Numerical Analysis for Radiation Resistant InGaP Solar Cell
- Microscopic Distributions of Light Elements and Their Precipitates in Multicrystalline Silicon for Solar Cells
- Analysis of Heteroepitaxial AlGaAs/Si Tandem Solar Cell for Concentrator Applications
- Fabrication of GaAs/GaInNAs Heterojunction Solar Cells Applicable To High-Efficiency Multi-junction Tandem Structures
- Effect of Base Doping Concentration on Radiation-Resistance for GaAs Sub-Cells in InGaP/GaAs/Ge
- Study of the Degradation of p–n Diode Characteristics Caused by Small-Angle Grain Boundaries in Multi-Crystalline Silicon Substrate for Solar Cells
- Wide-Angle Antireflection Effect of Subwavelength Structures for Solar Cells
- Study on Iron Distribution and Electrical Activities at Grain Boundaries in Polycrystalline Silicon Substrate for Solar Cells
- Fabrication of Thin-Film Polycrystalline Silicon Solar Cells by Silane-Gas-Free Process Using Aluminum-Induced Crystallization
- Impact of Light-Element Impurities on Crystalline Defect Generation in Silicon Wafer (Special Issue : Solid State Devices and Materials (1))
- Surface Recombination of Crystalline Silicon Substrates Passivated by Atomic-Layer-Deposited AIOx (Special Issue : Solid State Devices and Materials (2))
- Interaction between Metal Impurities and Small-Angle Grain Boundaries on Recombination Properties in Multicrystalline Silicon for Solar Cells
- Structural and Molecular Changes of C Thin Films with Incorporated Magnesium Atoms (Special Issue : Solid State Devices and Materials (2))
- Effect of Thermal Stress on a N-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
- Observation of In-Plane Asymmetric Strain Relaxation during Crystal Growth and Growth Interruption in InGaAs/GaAs(001)
- Origin Investigation of a Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
- Analysis of Intra-Grain Defects in Multicrystalline Silicon Wafers by Photoluminescence Mapping and Spectroscopy
- Improvements in Optoelectrical Properties of GaAsN by Controlling Step Density during Chemical Beam Epitaxy Growth
- Crystal Structures of Copper–Phthalocyanine on C60(111) Surface Grown by Molecular Beam Epitaxy
- Effects of Residual Carbon and Hydrogen Atoms on Electrical Property of GaAsN Films Grown by Chemical Beam Epitaxy
- Tris-diethylamino-silane Decomposition due to Tetrakis-diethylamido-hafnium in Hf1-xSixO2 Chemical Vapor Deposition
- Chemical Beam Epitaxy of GaAsN Thin Films with Monomethylhydrazine as N Source
- Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
- Radiation Resistance of Wide Band Gap $n^{+}/ p$ AlInGaP Solar Cell for High-Efficient Multijunction Space Solar Cells
- Carbon Reduction in GaAsN Thin Films by Flow-Rate-Modulated Chemical Beam Epitaxy
- Properties of a Nitrogen-Related Hole Trap Acceptor-Like State in p-Type GaAsN Grown by Chemical Beam Epitaxy
- Improvement in Characteristics of Thin Film Transistors upon High-Pressure Steam Annealing
- Erratum: ``Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films''
- Ni Precursor for Chemical Vapor Deposition of NiSi
- Vapor Pressure of Hf and Si Precursors for HfxSi1-xO2 Deposition Evaluated by a Saturated Gas Technique
- Ion Shower Doping Technique for Selective Emitter Structure in Crystalline Silicon Solar Cells
- III--V--N Materials for Super-High Efficiency Multi Junction Solar Cells
- Structure Analyses of Room Temperature Deposited AlO
- Ge
- Ni Thin Film Deposition from Tetrakistrifluorophosphine-Nickel
- Ion Shower Doping Technique for Selective Emitter Structure in Crystalline Silicon Solar Cells (Special Issue : Solid State Devices and Materials)
- N–H related defects in GaAsN grown through chemical beam epitaxy
- Effect of surface morphology on the density of energy states in GaAsN grown by chemical beam epitaxy