Interaction between Metal Impurities and Small-Angle Grain Boundaries on Recombination Properties in Multicrystalline Silicon for Solar Cells

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概要

• 論文の詳細を見る
• 2012-04-25

著者

• Ogura Atsushi

  Meiji University

• OHSHITA Yoshio

  Toyota Technological Institute

• SAMESHIMA Takashi

  Meiji University

• MIYAZAKI Naoto

  Meiji University

• TSUCHIYA Yuki

  Meiji University

• HASHIGUCHI Hiroki

  Meiji University

• TACHIBANA Tomihisa

  Meiji University

• KOJIMA Takuto

  Toyota Technological Institute

• ARAFUNE Koji

  University of Hyogo

• Ohshita Yoshio

  Toyota Technological Inst. Nagoya Jpn

• Ogura Atsushi

  Meiji Univ. Kawasaki Jpn

関連論文

• Nitrogen Related Electron Trap with High Capture Cross Section in n-Type GaAsN Grown by Chemical Beam Epitaxy
• In situ Real-Time X-ray Reciprocal Space Mapping during InGaAs/GaAs Growth for Understanding Strain Relaxation Mechanisms
• Shallow Carrier Trap Levels in GaAsN Investigated by Photoluminescence
• Composition Control of Ni Silicide by Chemical Vapor Deposition Using Ni(PF3)4 and Si3H8
• Composition control of Ni-silicide by CVD using Ni(PF_3)_4 and Si_3H_8
• Ni Thin Film Deposition from Tetrakistrifluorophosphine-Nickel
• Vapor Pressure of Hf and Si Precursors for Hf_xSi_O_2 Deposition Evaluated by a Saturated Gas Technique
• Depth Profiling of Si/Si_Ge_x Structures by Micro-Raman Imaging
• Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films
• Microscopic Distributions of Light Elements and Their Precipitates in Multicrystalline Silicon for Solar Cells
• Study of the Degradation of p–n Diode Characteristics Caused by Small-Angle Grain Boundaries in Multi-Crystalline Silicon Substrate for Solar Cells
• Wide-Angle Antireflection Effect of Subwavelength Structures for Solar Cells
• Study on Iron Distribution and Electrical Activities at Grain Boundaries in Polycrystalline Silicon Substrate for Solar Cells
• Impact of Light-Element Impurities on Crystalline Defect Generation in Silicon Wafer (Special Issue : Solid State Devices and Materials (1))
• Surface Recombination of Crystalline Silicon Substrates Passivated by Atomic-Layer-Deposited AIOx (Special Issue : Solid State Devices and Materials (2))
• Complementary Distribution of NN and NNO Complexes in Cast-Grown Multicrystalline Silicon for Photovoltaic Cells
• Interaction between Metal Impurities and Small-Angle Grain Boundaries on Recombination Properties in Multicrystalline Silicon for Solar Cells
• Effect of Thermal Stress on a N-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
• Observation of In-Plane Asymmetric Strain Relaxation during Crystal Growth and Growth Interruption in InGaAs/GaAs(001)
• Origin Investigation of a Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
• Analysis of Intra-Grain Defects in Multicrystalline Silicon Wafers by Photoluminescence Mapping and Spectroscopy
• Effects of Residual Carbon and Hydrogen Atoms on Electrical Property of GaAsN Films Grown by Chemical Beam Epitaxy
• Tris-diethylamino-silane Decomposition due to Tetrakis-diethylamido-hafnium in Hf1-xSixO2 Chemical Vapor Deposition
• Chemical Beam Epitaxy of GaAsN Thin Films with Monomethylhydrazine as N Source
• Carbon Reduction in GaAsN Thin Films by Flow-Rate-Modulated Chemical Beam Epitaxy
• Properties of a Nitrogen-Related Hole Trap Acceptor-Like State in p-Type GaAsN Grown by Chemical Beam Epitaxy
• Orientation Dependence of Silicon Oxidation Ratio in High-Pressure Water Vapor
• Improvement in Characteristics of Thin Film Transistors upon High-Pressure Steam Annealing
• Erratum: ``Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films''
• Ni Precursor for Chemical Vapor Deposition of NiSi
• Vapor Pressure of Hf and Si Precursors for HfxSi1-xO2 Deposition Evaluated by a Saturated Gas Technique
• Ion Shower Doping Technique for Selective Emitter Structure in Crystalline Silicon Solar Cells
• III--V--N Materials for Super-High Efficiency Multi Junction Solar Cells
• Formation of Si
• Structure Analyses of Room Temperature Deposited AlO
• Ge
• Formation of Si₂N₂O Microcrystalline Precipitates near the Quartz Crucible Wall Coated with Silicon Nitride in Cast-Grown Silicon
• Ni Thin Film Deposition from Tetrakistrifluorophosphine-Nickel
• Ion Shower Doping Technique for Selective Emitter Structure in Crystalline Silicon Solar Cells (Special Issue : Solid State Devices and Materials)
• N–H related defects in GaAsN grown through chemical beam epitaxy

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