Ohshita Yoshio | Toyota Technological Inst. Nagoya Jpn

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著作論文

Nitrogen Related Electron Trap with High Capture Cross Section in n-Type GaAsN Grown by Chemical Beam Epitaxy
Shallow Carrier Trap Levels in GaAsN Investigated by Photoluminescence
Composition Control of Ni Silicide by Chemical Vapor Deposition Using Ni(PF3)4 and Si3H8
Ni Thin Film Deposition from Tetrakistrifluorophosphine-Nickel
Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films
Microscopic Distributions of Light Elements and Their Precipitates in Multicrystalline Silicon for Solar Cells
Study of the Degradation of p–n Diode Characteristics Caused by Small-Angle Grain Boundaries in Multi-Crystalline Silicon Substrate for Solar Cells
Wide-Angle Antireflection Effect of Subwavelength Structures for Solar Cells
Study on Iron Distribution and Electrical Activities at Grain Boundaries in Polycrystalline Silicon Substrate for Solar Cells
Impact of Light-Element Impurities on Crystalline Defect Generation in Silicon Wafer (Special Issue : Solid State Devices and Materials (1))
Surface Recombination of Crystalline Silicon Substrates Passivated by Atomic-Layer-Deposited AIOx (Special Issue : Solid State Devices and Materials (2))
Interaction between Metal Impurities and Small-Angle Grain Boundaries on Recombination Properties in Multicrystalline Silicon for Solar Cells
Effect of Thermal Stress on a N-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
Observation of In-Plane Asymmetric Strain Relaxation during Crystal Growth and Growth Interruption in InGaAs/GaAs(001)
Origin Investigation of a Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
Analysis of Intra-Grain Defects in Multicrystalline Silicon Wafers by Photoluminescence Mapping and Spectroscopy
Effects of Residual Carbon and Hydrogen Atoms on Electrical Property of GaAsN Films Grown by Chemical Beam Epitaxy
Tris-diethylamino-silane Decomposition due to Tetrakis-diethylamido-hafnium in Hf1-xSixO2 Chemical Vapor Deposition
Chemical Beam Epitaxy of GaAsN Thin Films with Monomethylhydrazine as N Source
Carbon Reduction in GaAsN Thin Films by Flow-Rate-Modulated Chemical Beam Epitaxy
Properties of a Nitrogen-Related Hole Trap Acceptor-Like State in p-Type GaAsN Grown by Chemical Beam Epitaxy
Improvement in Characteristics of Thin Film Transistors upon High-Pressure Steam Annealing
Erratum: ``Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films''
Ni Precursor for Chemical Vapor Deposition of NiSi
Vapor Pressure of Hf and Si Precursors for HfxSi1-xO2 Deposition Evaluated by a Saturated Gas Technique
Ion Shower Doping Technique for Selective Emitter Structure in Crystalline Silicon Solar Cells
III--V--N Materials for Super-High Efficiency Multi Junction Solar Cells
Structure Analyses of Room Temperature Deposited AlO
Ge
Ni Thin Film Deposition from Tetrakistrifluorophosphine-Nickel
Ion Shower Doping Technique for Selective Emitter Structure in Crystalline Silicon Solar Cells (Special Issue : Solid State Devices and Materials)
N–H related defects in GaAsN grown through chemical beam epitaxy

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