Observation of In-Plane Asymmetric Strain Relaxation during Crystal Growth and Growth Interruption in InGaAs/GaAs(001)
スポンサーリンク
概要
- 論文の詳細を見る
In-plane asymmetric strain relaxation in lattice-mismatched InGaAs/GaAs(001) heteroepitaxy is studied by in situ three-dimensional X-ray reciprocal space mapping. Repeating crystal growth and growth interruptions during measurements allows us to investigate whether the strain relaxation is limited at a certain thickness or saturated. We find that the degree of relaxation during growth interruption depends on both the film thickness and the in-plane directions. Significant lattice relaxation is observed in rapid relaxation regimes during interruption. This is a clear indication that relaxation is kinetically limited. In addition, relaxation along the [110] direction can saturate more readily than that along the [\bar{1}10] direction. We discuss this result in terms of the interaction between orthogonally aligned dislocations.
- 2012-02-25
著者
-
YAMAGUCHI Masafumi
Toyota Technological Institute
-
Kamiya Itaru
Toyota Technological Inst. Nagoya Jpn
-
Ohshita Yoshio
Toyota Technological Inst. Nagoya Jpn
-
Sasaki Takuo
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
-
Sasaki Takuo
Toyota Technological Institute, Nagoya 468-8511, Japan
-
Shimomura Kenichi
Toyota Technological Institute, Nagoya 468-8511, Japan
-
Suzuki Hidetoshi
University of Miyazaki, Miyazaki 889-2154, Japan
-
Takahasi Masamitu
Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan
-
Kamiya Itaru
Toyota Technological Institute, Nagoya 468-8511, Japan
関連論文
- Annealing Enhancement Effect by Light Illumination on Proton Irradiated Cu(In,Ga)Se_2 Thin-Film Solar Cells : Nuclear Science, Plasmas, and Electric Discharges
- Radiation Resistant Low Bandgap InGaASP Solar Cell for Multi-Junction Solar Cells : Semiconductors
- Effects of Annealing on Type Converted Si and Space Solar Cells Irradiated with Heavy Fluence 1 MeV Electrons
- Analysis of Radiation Damage to Si Solar Cells under High-Fluence Electron Irradiation
- Improved Height Measurement of Single CdSe Colloidal Quantum Dots by Contact-Mode Atomic Fore Microscopy Using Carbon Nano-Tube Tips ; for the Investigation of Current-Voltage Characteristics
- Characteristics of Alpha-Radiation-Induced Deep Level Defects in p-Type InP Grown by Metal-Organic Chemical Vapor Deposition
- Fabrication of Thin-Film Polycrystalline Silicon Solar Cells by Silane-Gas-Free Process Using Aluminum-Induced Crystallization
- Nitrogen Related Electron Trap with High Capture Cross Section in n-Type GaAsN Grown by Chemical Beam Epitaxy
- In situ Real-Time X-ray Reciprocal Space Mapping during InGaAs/GaAs Growth for Understanding Strain Relaxation Mechanisms
- Investigation of High-Efficiency InGaP/GaAs Tandem Solar Cells under Concentration Operation
- Two-Terminal Monolithic In_Ga_P/GaAs Tandem Solar Cells with a High Conversion Efficiency of Over 30%
- Deep Level Transient Spectroscopy Analysis of 10MeV Proton and 1MeV Electron Irradiation-Induced Defects in p-InGaP and InGaP-based Solar Cells
- Radiation Resistance of InP-Related Materials
- Shallow Carrier Trap Levels in GaAsN Investigated by Photoluminescence
- Analysis of Photovoltaic Properties of C_60-Si Heterojunction Solar Cells
- Self-Aligned Formation of Porous Silicon Membranes Using Si Diaphragm Structures : Instrumentation, Measurement, and Fabrication Technology
- Composition Control of Ni Silicide by Chemical Vapor Deposition Using Ni(PF3)4 and Si3H8
- Ni Thin Film Deposition from Tetrakistrifluorophosphine-Nickel
- Growth Rate and Crystallinity of Nanocrystalline Silicon Film Grown by Electron Beam Excited Plasma Chemical Vapor Deposition
- InP Solar Cells and their Flight Experiments
- Theoretical Optimization of Base Doping Concentration for Radiation Resistance of InGaP Subcells of InGaP/GaAs/Ge Based on Minority-Carrier Lifetime
- Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films
- Numerical Analysis for Radiation Resistant InGaP Solar Cell
- Microscopic Distributions of Light Elements and Their Precipitates in Multicrystalline Silicon for Solar Cells
- Analysis of Heteroepitaxial AlGaAs/Si Tandem Solar Cell for Concentrator Applications
- Fabrication of GaAs/GaInNAs Heterojunction Solar Cells Applicable To High-Efficiency Multi-junction Tandem Structures
- Effect of Base Doping Concentration on Radiation-Resistance for GaAs Sub-Cells in InGaP/GaAs/Ge
- Study of the Degradation of p–n Diode Characteristics Caused by Small-Angle Grain Boundaries in Multi-Crystalline Silicon Substrate for Solar Cells
- Wide-Angle Antireflection Effect of Subwavelength Structures for Solar Cells
- Study on Iron Distribution and Electrical Activities at Grain Boundaries in Polycrystalline Silicon Substrate for Solar Cells
- Fabrication of Thin-Film Polycrystalline Silicon Solar Cells by Silane-Gas-Free Process Using Aluminum-Induced Crystallization
- Impact of Light-Element Impurities on Crystalline Defect Generation in Silicon Wafer (Special Issue : Solid State Devices and Materials (1))
- Surface Recombination of Crystalline Silicon Substrates Passivated by Atomic-Layer-Deposited AIOx (Special Issue : Solid State Devices and Materials (2))
- Interaction between Metal Impurities and Small-Angle Grain Boundaries on Recombination Properties in Multicrystalline Silicon for Solar Cells
- Structural and Molecular Changes of C Thin Films with Incorporated Magnesium Atoms (Special Issue : Solid State Devices and Materials (2))
- Effect of Thermal Stress on a N-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
- Observation of In-Plane Asymmetric Strain Relaxation during Crystal Growth and Growth Interruption in InGaAs/GaAs(001)
- Origin Investigation of a Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
- Analysis of Intra-Grain Defects in Multicrystalline Silicon Wafers by Photoluminescence Mapping and Spectroscopy
- Crystal Structures of Copper–Phthalocyanine on C60(111) Surface Grown by Molecular Beam Epitaxy
- Effects of Residual Carbon and Hydrogen Atoms on Electrical Property of GaAsN Films Grown by Chemical Beam Epitaxy
- Tris-diethylamino-silane Decomposition due to Tetrakis-diethylamido-hafnium in Hf1-xSixO2 Chemical Vapor Deposition
- Chemical Beam Epitaxy of GaAsN Thin Films with Monomethylhydrazine as N Source
- Radiation Resistance of Wide Band Gap $n^{+}/ p$ AlInGaP Solar Cell for High-Efficient Multijunction Space Solar Cells
- Carbon Reduction in GaAsN Thin Films by Flow-Rate-Modulated Chemical Beam Epitaxy
- Properties of a Nitrogen-Related Hole Trap Acceptor-Like State in p-Type GaAsN Grown by Chemical Beam Epitaxy
- Improvement in Characteristics of Thin Film Transistors upon High-Pressure Steam Annealing
- Erratum: ``Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films''
- Ni Precursor for Chemical Vapor Deposition of NiSi
- Vapor Pressure of Hf and Si Precursors for HfxSi1-xO2 Deposition Evaluated by a Saturated Gas Technique
- Ion Shower Doping Technique for Selective Emitter Structure in Crystalline Silicon Solar Cells
- III--V--N Materials for Super-High Efficiency Multi Junction Solar Cells
- Structure Analyses of Room Temperature Deposited AlO
- Ge
- Ni Thin Film Deposition from Tetrakistrifluorophosphine-Nickel
- Ion Shower Doping Technique for Selective Emitter Structure in Crystalline Silicon Solar Cells (Special Issue : Solid State Devices and Materials)
- N–H related defects in GaAsN grown through chemical beam epitaxy