Vapor Pressure of Hf and Si Precursors for HfxSi1-xO2 Deposition Evaluated by a Saturated Gas Technique
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概要
- 論文の詳細を見る
The vapor pressure of the precursor is an important parameter, which is correlated with supply amount and deposition rate during chemical vapor deposition (CVD). Tetrakis(ethylmethyl)hafnium, tetrakis(diethylamido)hafnium, tetraethoxysilane, tetraisocyanatosilane and tri(diethylamino)silane are promising precursors for CVD. HfxSi1-xO2 films deposited using these precursors have been studied for applications in high-$k$ gate insulators. The vapor pressure values are required for estimating adequate deposition conditions. Therefore, Clausius–Clapeyron equations for the precursors were systematically determined using a saturated gas technique.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-03-15
著者
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Machida Hideaki
Tri Chemical Laboratories Inc.
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Kada Takeshi
Tri Chemical Laboratories Inc.
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Ishikawa Masato
Tri Chemical Laboratories Inc.
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Ohshita Yoshio
Toyota Technological Inst. Nagoya Jpn
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Ogura Atsushi
Silicon System Research Labs., NEC Corp., 1120 Shimokuzawa, Sagamihara 229-1198, Japan
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Ogura Atsushi
Silicon Systems Research Lab., NEC Corp., 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Ishikawa Masato
TRI Chemical Lab. Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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Kada Takeshi
TRI Chemical Lab. Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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Machida Hideaki
TRI Chemical Lab. Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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