Microscopic Distributions of Light Elements and Their Precipitates in Multicrystalline Silicon for Solar Cells
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概要
- 論文の詳細を見る
The behaviors of carbon, nitrogen, and oxygen in multicrystalline silicon grown by the cast method were investigated using infrared absorption spectroscopy. A microscopic distribution map of the impurities and their precipitates was obtained with a spatial resolution of a few tens of μm. The distribution and bonding states depended on the impurity: nitrogen and oxygen precipitated as crystalline nitride ($\alpha$-Si3N4) and amorphous oxide (SiO2), respectively, while carbon distributed homogeneously as isolated substitutional atoms. The nitrogen and oxygen precipitates remained independent, and thus, they might not have formed a compound oxynitride like Si2N2O.
- 2010-11-25
著者
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Ono Haruhiko
Kanagawa Industrial Technol. Center Kanagawa Jpn
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ARAFUNE Koji
University of Hyogo
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ISHIZUKA Takahide
Kanagawa Industrial Technology Center
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Ohshita Yoshio
Toyota Technological Inst. Nagoya Jpn
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Ogura Atsushi
Meiji Univ. Kawasaki Jpn
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Kato Chihiro
Kanagawa Industrial Technology Center, Ebina, Kanagawa 243-0435, Japan
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Arafune Koji
University of Hyogo, Himeji, Hyogo 671-2280, Japan
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Ono Haruhiko
Kanagawa Industrial Technology Center, Ebina, Kanagawa 243-0435, Japan
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Ishizuka Takahide
Kanagawa Industrial Technology Center, Ebina, Kanagawa 243-0435, Japan
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Ogura Atsushi
Meiji University, Kawasaki 214-8571, Japan
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