Orientation Dependence of Silicon Oxidation Ratio in High-Pressure Water Vapor
スポンサーリンク
概要
- 論文の詳細を見る
We investigated the relative oxidation rates of single-crystalline Si substrates with various orientations to study the formation of thermally grown oxide films on multicrystalline Si at low temperatures in high-pressure water vapor. The oxidation rates depended greatly on the Si substrate orientation, but the increasing pressure did not change the proportion of their relative oxidation ratio even though the oxidation rate was accelerated by the pressure. On the basis of our modeling of the Si surface structure, we consider that the dependence of oxidation ratio on substrate Si orientation depends in turn on interface atomic density for a structure that has one or two Si–O bonds.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-12-15
著者
-
YOSHINOUCHI Atsushi
IHI Corporation
-
Ogura Atsushi
Meiji Univ. Kawasaki Jpn
-
Yoshinouchi Atsushi
IHI Corporation, Shin-nakahara-cho, Isogo-ku, Yokohama 235-8501, Japan
-
Yamamoto Naoya
IHI Corporation, Shin-nakahara-cho, Isogo-ku, Yokohama 235-8501, Japan
-
Oshita Yoshio
Toyota Technological Institute, 1-12-1 Hisakata, Tempaku-ku, Nagoya 4685-8511, Japan
-
Yamamoto Naoya
IHI Corporation, 1 Shin-nakahara-cho, Isogo-ku, Yokohama 235-8501, Japan
関連論文
- A method for an intracavity green laser with high-pulse-energy operation
- Composition Control of Ni Silicide by Chemical Vapor Deposition Using Ni(PF3)4 and Si3H8
- Composition control of Ni-silicide by CVD using Ni(PF_3)_4 and Si_3H_8
- Ni Thin Film Deposition from Tetrakistrifluorophosphine-Nickel
- Depth Profiling of Si/Si_Ge_x Structures by Micro-Raman Imaging
- Microscopic Distributions of Light Elements and Their Precipitates in Multicrystalline Silicon for Solar Cells
- Impact of Light-Element Impurities on Crystalline Defect Generation in Silicon Wafer (Special Issue : Solid State Devices and Materials (1))
- Complementary Distribution of NN and NNO Complexes in Cast-Grown Multicrystalline Silicon for Photovoltaic Cells
- Interaction between Metal Impurities and Small-Angle Grain Boundaries on Recombination Properties in Multicrystalline Silicon for Solar Cells
- Analysis of Intra-Grain Defects in Multicrystalline Silicon Wafers by Photoluminescence Mapping and Spectroscopy
- Orientation Dependence of Silicon Oxidation Ratio in High-Pressure Water Vapor
- Improvement in Characteristics of Thin Film Transistors upon High-Pressure Steam Annealing
- Ion Shower Doping Technique for Selective Emitter Structure in Crystalline Silicon Solar Cells
- Formation of Si
- Formation of Si₂N₂O Microcrystalline Precipitates near the Quartz Crucible Wall Coated with Silicon Nitride in Cast-Grown Silicon
- Ni Thin Film Deposition from Tetrakistrifluorophosphine-Nickel
- Ion Shower Doping Technique for Selective Emitter Structure in Crystalline Silicon Solar Cells (Special Issue : Solid State Devices and Materials)