Formation of Si

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概要

• 論文の詳細を見る

• The chemical reaction near the crucible wall during directional solidification of Si crystals for solar cells has been investigated. Fragments of the crucible that were used for the crystal growth of a Si ingot were examined. As results, we found that a chemical reaction took place at the coating/crucible interface and that silicon oxynitride particles precipitated near the crucible wall. The oxynitride precipitates were determined as stoichiometric Si<inf>2</inf>N<inf>2</inf>O and were revealed not to be amorphous but of orthorhombic crystal symmetry. We show crucial evidence of the formation of stoichiometric Si<inf>2</inf>N<inf>2</inf>O microcrystalline precipitates inside the Si crystal.

• 2013-08-25

著者

• Ono Haruhiko

  Kanagawa Industrial Technol. Center Kanagawa Jpn

• TACHIBANA Tomihisa

  Meiji University

• Kusunoki Hiroki

  Kanagawa Industrial Technology Center

• Ogura Atsushi

  Meiji Univ. Kawasaki Jpn

• Motoizumi Yu

  Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan

• Motoizumi Yu

  Kanagawa Industrial Technology Center, Ebina, Kanagawa 243-0435, Japan

• Sato Kuniyuki

  Kanagawa Industrial Technology Center, Ebina, Kanagawa 243-0435, Japan

関連論文

• Nitrogen-Oxygen Complexes Associated with Shallow Thermal Donors in Silicon
• Composition Control of Ni Silicide by Chemical Vapor Deposition Using Ni(PF3)4 and Si3H8
• Composition control of Ni-silicide by CVD using Ni(PF_3)_4 and Si_3H_8
• Ni Thin Film Deposition from Tetrakistrifluorophosphine-Nickel
• Depth Profiling of Si/Si_Ge_x Structures by Micro-Raman Imaging
• Microscopic Distributions of Light Elements and Their Precipitates in Multicrystalline Silicon for Solar Cells
• Assessing Aptitude of Plated Ni–W Film as Mold Materials for Borosilicate Glass
• Second Harmonic Vibrational Mode of Substitutional Carbon in Cast-Grown Multicrystalline Silicon
• Impact of Light-Element Impurities on Crystalline Defect Generation in Silicon Wafer (Special Issue : Solid State Devices and Materials (1))
• Complementary Distribution of NN and NNO Complexes in Cast-Grown Multicrystalline Silicon for Photovoltaic Cells
• Interaction between Metal Impurities and Small-Angle Grain Boundaries on Recombination Properties in Multicrystalline Silicon for Solar Cells
• Growth of Nanocubic MgO on Silicon Substrate by Pulsed Laser Deposition
• Analysis of Intra-Grain Defects in Multicrystalline Silicon Wafers by Photoluminescence Mapping and Spectroscopy
• Orientation Dependence of Silicon Oxidation Ratio in High-Pressure Water Vapor
• Improvement in Characteristics of Thin Film Transistors upon High-Pressure Steam Annealing
• Ion Shower Doping Technique for Selective Emitter Structure in Crystalline Silicon Solar Cells
• Formation of Si
• Formation of Si₂N₂O Microcrystalline Precipitates near the Quartz Crucible Wall Coated with Silicon Nitride in Cast-Grown Silicon
• Ni Thin Film Deposition from Tetrakistrifluorophosphine-Nickel
• Ion Shower Doping Technique for Selective Emitter Structure in Crystalline Silicon Solar Cells (Special Issue : Solid State Devices and Materials)

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