Ion Shower Doping Technique for Selective Emitter Structure in Crystalline Silicon Solar Cells

概要

論文の詳細を見る
For realizing low-cost and high-conversion-efficiency silicon solar cells, we propose an ion shower doping technique for fabricating conventional and selective emitter structure solar cells. Because of its high through put with a large beam area, the technique could lead to low-cost production of the emitter layer. We used this technique to form a uniform emitter layer and also a selective high-doping emitter region for silicon solar cells, which were compared with cells prepared by POCl<inf>3</inf>diffusion. The conventional structure cells were confirmed to have good electrical properties with uniform conversion efficiency compared with the cells prepared by POCl<inf>3</inf>diffusion. There was no doping-induced damage nor metal impurities interfused during the ion shower doping. In addition, the conversion efficiency of selective emitter structure cells was higher than that of cell prepared by POCl<inf>3</inf>diffusion only. We concluded that the ion shower doping technique is useful for forming a uniform emitter layer as well as a selective emitter region.
2013-04-25