Structure Analyses of Room Temperature Deposited AlO
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概要
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We studied the structure of ozone-based atomic layer deposited aluminium oxide (AlO<inf>x</inf>) films as a passivation layer for p-type crystalline silicon (c-Si) solar cells and focused on the differences in the structure by the production conditions of AlO<inf>x</inf>films. Carbon (C)-related groups such as methyl, hydroxyl, and carboxyl groups which originate from the aluminium source, trimethylaluminium, were only found in the AlO<inf>x</inf>film deposited at room temperature (RT-sample). By post-deposition thermal annealing (PDA), the C-related groups were desorbed from the film and a part of their space remained as voids. The C-related groups were not found in the films deposited at 200 or 300 °C (heated-samples) since they were desorbed during the deposition. Even though C-related groups did not exist in the both RT- and heated-samples after PDA, the structure of the AlO<inf>x</inf>film of the RT-sample was different from that of the heated-sample.
- 2013-12-25
著者
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Ogura Atsushi
School Of Science And Engineering Meiji University
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Ohshita Yoshio
Toyota Technological Inst. Nagoya Jpn
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Lee Hyun
School of Chemical Engineering and Materials Science, Chung-Ang University, 221 Huksuk-dong, Dongjak-gu, Seoul 156-756, Korea
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Lee Hyun
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
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Sakai Chikako
School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan
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Yamamoto Shunsuke
School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan
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Urushibata Ko
School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan
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Miki Shohei
School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan
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Arafune Koji
School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan
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Yoshida Haruhiko
School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan
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Satoh Shin-ichi
School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan
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