Evaluation of Strained-Silicon by Electron Backscattering Pattern Measurement: Comparison Study with UV-Raman Measurement and Edge Force Model Calculation
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概要
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We demonstrate the results of strain (stress) evaluation obtained from electron backscattering pattern (EBSP) measurement for samples of a strained Si-on-insulator (SSOI) and a Si substrate with a patterned SiN film. Two-dimensional stress distributions were obtained in $40\times 40$ μm2 areas of the SSOI. The biaxial stress state was also obtained in the SSOI. Furthermore, clear cross-hatch contrast was observed, especially in the distribution of shear stress $S_{xy}$, in contrast to with the other distributions of normal stress $S_{xx}$ and $S_{yy}$. One- and two-dimensional stress distributions in the Si substrate with the patterned SiN film were also obtained from EBSP measurement. Moreover, the results were compared with those of UV-Raman measurement and edge force model calculation, and were found to have a good correlation with each other. EBSP measurement was used to measure the complicated biaxial stress including the shear stress in a sample with a 150-nm-wide space pattern. We can conclude that EBSP measurement is a useful method for precisely measuring stress with high spatial resolution.
- 2011-01-25
著者
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Kosemura Daisuke
School Of Science And Engineering Meiji University
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Ogura Atsushi
School Of Science And Engineering Meiji University
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Akamatsu Hiroaki
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Takei Munehisa
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Nagata Kohki
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Tomita Motohiro
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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