Study of Charge Trap Sites in SiN Films by Hard X-ray Photoelectron Spectroscopy
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概要
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Hard X-ray photoelectron spectroscopy (HAX-PES) was performed at SPring-8, and has enabled us to study the bulk properties of SiN films deposited by microwave plasma-enhanced chemical vapor deposition and deeply buried SiN/SiO2 interfaces, owing to the large inelastic mean free path of a photoelectron with a high kinetic energy. The defect states in the SiN films were examined by HAX-PES in order to verify the charge-trapping mechanism in a silicon–oxide–nitride–oxide–silicon flash memory device. X-ray reflectometry (XRR) was also performed at SPring-8. There is a complementary relationship between photoelectron spectroscopy and XRR. This methodology is proposed in this paper as a powerful tool for examining material properties. The detailed depth profile analysis of the chemical states in the SiN films obtained by angle-resolved HAX-PES also helped us to examine the charge-trapping mechanism.
- 2010-04-25
著者
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Kosemura Daisuke
School Of Science And Engineering Meiji University
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Atsushi Ogura
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Jin-Young Son
Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Koto, Sayo, Hyogo 679-5198, Japan
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Yoshihiro Hirota
Tokyo Electron AT, SPA Development Engineering Department, 1-8 Fuso-cho, Amagasaki, Hyogo 660-0891, Japan
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Hiroaki Akamatsu
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Takei Munehisa
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Noda Kohki
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Maki Hattori
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Daisuke Katayama
Tokyo Electron AT, SPA Development Engineering Department, 1-8 Fuso-cho, Amagasaki, Hyogo 660-0891, Japan
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Tatsuo Nishita
Tokyo Electron AT, SPA Development Engineering Department, 1-8 Fuso-cho, Amagasaki, Hyogo 660-0891, Japan
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Masatake Machida
Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Koto, Sayo, Hyogo 679-5198, Japan
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Tomoyuki Koganezawa
Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Koto, Sayo, Hyogo 679-5198, Japan
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Ichiro Hirosawa
Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Koto, Sayo, Hyogo 679-5198, Japan
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