Suppression of Fermi Level Pinning and Flat Band Voltage Shift by Inserting Diamond-Like Carbon at a High-$k$/SiO2 Interface in a Gate Stack Structure

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概要

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• Fermi level pinning (FLP) has been a major impediment to limiting flat band voltage ($V_{\text{fb}}$) shift in the metal/high-$k$ gate stacks. This phenomenon occurs due to dipole formation at the high-$k$/SiO2 interface, caused by oxygen diffusion from the high-$k$ oxide to the underlying SiO2. One method of eliminating FLP is to suppress oxygen diffusion through the high-$k$/SiO2 interface. Diamond-like carbon (DLC) has potential as an oxygen diffusion barrier, since it has an appropriate optical band gap and dielectric constant. After inserting DLC into a high-$k$/SiO2 interface, we found that FLP was suppressed, since we observed a less flat band shift before and after rapid thermal annealing in an oxygen atmosphere. We could also see a clear work function dependence, giving direct evidence of FLP elimination when using Pt and W in an HfO2/DLC/SiO2 gate stack.

• 2010-06-25

著者

• Atsushi Ogura

  School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan

• Toyohiro Chikyow

  Advanced Electric Materials Center, National Institute for Materials Science, Namiki, Tsukuba, Ibaraki 305-0044, Japan

• Tetsuya Adachi

  Advanced Electric Materials Center, National Institute for Materials Science, Namiki, Tsukuba, Ibaraki 305-0044, Japan

• Adachi Tetsuya

  Advanced Electric Materials Center, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan

• Iwashita Yuta

  School of Science and Technology, Meiji University, Higashimita, Tama-ku, Kawasaki 214-8571, Japan

• Itaka Kenji

  Advanced Electric Materials Center, National Institute for Materials Science, Namiki, Tsukuba, Ibaraki 305-0044, Japan

• Yuta Iwashita

  School of Science and Technology, Meiji University, Higashimita, Tama-ku, Kawasaki 214-8571, Japan

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