Adachi Tetsuya | Advanced Electric Materials Center, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
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概要
- Adachi Tetsuyaの詳細を見る
- 同名の論文著者
- Advanced Electric Materials Center, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japanの論文著者
関連著者
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Adachi Tetsuya
Advanced Electric Materials Center, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
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Iwashita Yuta
School of Science and Technology, Meiji University, Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Itaka Kenji
North Japan Research Institute For Sustainable Energy Hirosaki University
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Ogura Atsushi
School Of Science And Engineering Meiji University
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Atsushi Ogura
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Chikyow Toyohiro
Advanced Electric Materials Center, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Toyohiro Chikyow
Advanced Electric Materials Center, National Institute for Materials Science, Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Tetsuya Adachi
Advanced Electric Materials Center, National Institute for Materials Science, Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Itaka Kenji
Advanced Electric Materials Center, National Institute for Materials Science, Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Kiyota Yuji
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
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Itaka Kenji
North Japan Research Institute for Sustainable Energy, Hirosaki University, Aomori 030-0813, Japan
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Yuta Iwashita
School of Science and Technology, Meiji University, Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Iwashita Yuta
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
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Chikyow Toyohiro
Advanced Electric Materials Center, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
著作論文
- Suppression of Fermi Level Pinning and Flat Band Voltage Shift by Inserting Diamond-Like Carbon at a High-$k$/SiO2 Interface in a Gate Stack Structure
- Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors