Atsushi Ogura | School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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概要
- Atsushi Ogura の詳細を見る
- 同名の論文著者
- School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japanの論文著者
関連著者
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Atsushi Ogura
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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LIU Yongxun
National Institute of Advanced Industrial Science and Technology
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Endo Kazuhiko
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Kosemura Daisuke
School Of Science And Engineering Meiji University
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Takashi Matsukawa
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Kunihiro Sakamoto
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Junichi Tsukada
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Yuki Ishikawa
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Hiromi Yamauchi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Tetsuro Hayashida
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Hiroaki Akamatsu
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Takei Munehisa
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Meishoku Masahara
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Meishoku Masahara
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Hayashida Tetsuro
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Kamei Takahiro
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
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Takahiro Kamei
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Yongxun Liu
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Takayuki Ohba
School of Engineering, the University of Tokyo, 2-11-16 Yayoi, Bunkyo, Tokyo 113-8656, Japan
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Toyohiro Chikyow
Advanced Electric Materials Center, National Institute for Materials Science, Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Jin-Young Son
Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Koto, Sayo, Hyogo 679-5198, Japan
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Yoshio Ohshita
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
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Yoshihiro Hirota
Tokyo Electron AT, SPA Development Engineering Department, 1-8 Fuso-cho, Amagasaki, Hyogo 660-0891, Japan
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Nagata Kohki
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Kohki Nagata
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Munehisa Takei
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Noda Kohki
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Maki Hattori
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Daisuke Katayama
Tokyo Electron AT, SPA Development Engineering Department, 1-8 Fuso-cho, Amagasaki, Hyogo 660-0891, Japan
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Tatsuo Nishita
Tokyo Electron AT, SPA Development Engineering Department, 1-8 Fuso-cho, Amagasaki, Hyogo 660-0891, Japan
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Masatake Machida
Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Koto, Sayo, Hyogo 679-5198, Japan
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Tomoyuki Koganezawa
Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Koto, Sayo, Hyogo 679-5198, Japan
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Ichiro Hirosawa
Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Koto, Sayo, Hyogo 679-5198, Japan
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Ryosuke Shimidzu
PHOTON Design Corporation, 24-6 Kamiya 2-chome, Kita, Tokyo 115-0043, Japan
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Tetsuya Adachi
Advanced Electric Materials Center, National Institute for Materials Science, Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Adachi Tetsuya
Advanced Electric Materials Center, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
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Iwashita Yuta
School of Science and Technology, Meiji University, Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Itaka Kenji
Advanced Electric Materials Center, National Institute for Materials Science, Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Yuta Iwashita
School of Science and Technology, Meiji University, Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Shin-ichi O'uchi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Masato Ishikawa
Gas-phase Growth Ltd., Koganei, Tokyo 184-0012, Japan
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Takayuki Ohba
School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Shinichi O'uchi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Hideaki Machida
Gas-phase Growth Ltd., Koganei, Tokyo 184-0012, Japan
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Seichi Hamada
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
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Takafumi Horiike
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
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Yoshio Ohshita
Toyota Technological Institute, Nagoya 468-8511, Japan
著作論文
- Suppression of Fermi Level Pinning and Flat Band Voltage Shift by Inserting Diamond-Like Carbon at a High-$k$/SiO2 Interface in a Gate Stack Structure
- Investigation of Thermal Stability of TiN Film Formed by Atomic Layer Deposition Using Tetrakis(dimethylamino)titanium Precursor for Metal-Gate Metal–Oxide–Semiconductor Field-Effect Transistor
- Study of Charge Trap Sites in SiN Films by Hard X-ray Photoelectron Spectroscopy
- Nanoscale Wet Etching of Physical-Vapor-Deposited Titanium Nitride and Its Application to Sub-30-nm-Gate-Length Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Fabrication
- Chemical Vapor Deposition of GeSbTe Thin Films for Next-Generation Phase Change Memory
- Evaluation of Anisotropic Biaxial Stress by Raman Spectroscopy with a High Numerical Aperture Immersion Objective Lens