Kamei Takahiro | School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
スポンサーリンク
概要
- Kamei Takahiroの詳細を見る
- 同名の論文著者
- School of Science and Technology, Meiji University, Kawasaki 214-8571, Japanの論文著者
関連著者
-
LIU Yongxun
National Institute of Advanced Industrial Science and Technology
-
Endo Kazuhiko
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
-
Kamei Takahiro
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
-
MATSUKAWA Takashi
National Institute of Advanced Industrial Science and Technology
-
YAMAUCHI Hiromi
National Institute of Advanced Industrial Science and Technology
-
ISHIKAWA Yuki
National Institute of Advanced Industrial Science and Technology
-
Ogura Atsushi
School Of Science And Engineering Meiji University
-
Tsukada Junichi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Hayashida Tetsuro
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
-
Sakamoto Kunihiro
National Institute Of Advanced Industrial Science And Technology (aist)
-
MASAHARA Meishoku
National Institute of Advanced Industrial Science and Technology
-
Masahara Meishoku
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
-
Ishikawa Yuki
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
-
Endo Kazuhiko
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
-
Ota Hiroyuki
National Institute Of Advanced Industrial Science And Technology
-
Migita Shinji
National Institute Of Advanced Industrial Science And Technology
-
Morita Yukinori
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
-
Kosemura Daisuke
School Of Science And Engineering Meiji University
-
Matsukawa Takashi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
-
Takashi Matsukawa
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Kunihiro Sakamoto
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Junichi Tsukada
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Yuki Ishikawa
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Hiromi Yamauchi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Meishoku Masahara
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Tsukada Junichi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
-
Tsukada Junichi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan
-
Yamauchi Hiromi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
-
Atsushi Ogura
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
-
Mizubayashi Wataru
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan
-
Hashiguchi Hiroki
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
-
Tetsuro Hayashida
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
-
Masahara Meishoku
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
-
Sakamoto Kunihiro
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
-
Liu Yongxun
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
-
Matsukawa Takashi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan
-
Migita Shinji
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan
-
Endo Kazuhiko
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan
-
O'uchi Shin-ichi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan
-
Ogura Atsushi
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
-
Morita Yukinori
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan
-
Hayashida Tetsuro
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
-
Ota Hiroyuki
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan
-
Ishikawa Yuki
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan
-
Shinichi O'uchi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Guo Ruofeng
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
著作論文
- Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal--Oxide--Semiconductor Field-Effect Transistors
- Nanoscale Wet Etching of Physical-Vapor-Deposited Titanium Nitride and Its Application to Sub-30-nm-Gate-Length Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Fabrication
- Experimental Study of Floating-Gate-Type MetalOxideSemiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application (Special Issue : Microprocesses and Nanotechnology)
- Fabrication and Characterization of NOR-Type Tri-Gate Flash Memory with Improved Inter-Poly Dielectric Layer by Rapid Thermal Oxidation (Special Issue : Microprocesses and Nanotechnology)
- Fabrication of Floating-Gate-Type Fin-Channel Double- and Tri-Gate Flash Memories and Comparative Study of Their Electrical Characteristics
- Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium--Nitride Gate for High-Performance Fin-Type Metal--Oxide--Semiconductor Field-Effect Transistors
- Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories
- Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories (Special Issue : Microprocesses and Nanotechnology)