Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium--Nitride Gate for High-Performance Fin-Type Metal--Oxide--Semiconductor Field-Effect Transistors

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概要

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• In this study, we successfully introduced an atomic-layer-deposited (ALD) titanium nitride (TiN) gate grown with a tetrakis(dimethylamino)titanium (TDMAT) precursor into fin-type metal--oxide--semiconductor field-effect transistor (FinFET) fabrication for the first time, and comparatively investigated the electrical characteristics, including mobility and threshold voltage (V_{\text{th}}) variation, of the fabricated ALD and physical-vapor-deposited (PVD)-TiN gate FinFETs. The ALD-TiN gate FinFETs showed superior conformality to the PVD-TiN gate FinFETs. The electron mobilities of the ALD- and PVD-TiN gate FinFETs were comparable in the small L_{\text{g}} region. It was also confirmed that the ALD-TiN gate FinFETs showed a smaller V_{\text{th}} variation than the PVD-TiN gate FinFETs.

• 2012-04-25

著者

• Ota Hiroyuki

  National Institute Of Advanced Industrial Science And Technology

• LIU Yongxun

  National Institute of Advanced Industrial Science and Technology

• MATSUKAWA Takashi

  National Institute of Advanced Industrial Science and Technology

• YAMAUCHI Hiromi

  National Institute of Advanced Industrial Science and Technology

• ISHIKAWA Yuki

  National Institute of Advanced Industrial Science and Technology

• Endo Kazuhiko

  National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn

• Migita Shinji

  National Institute Of Advanced Industrial Science And Technology

• Morita Yukinori

  National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn

• Kosemura Daisuke

  School Of Science And Engineering Meiji University

• Ogura Atsushi

  School Of Science And Engineering Meiji University

• Tsukada Junichi

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Tsukada Junichi

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan

• Masahara Meishoku

  School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan

• Hayashida Tetsuro

  School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan

• Kamei Takahiro

  School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan

• Mizubayashi Wataru

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan

• Hashiguchi Hiroki

  School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan

• Matsukawa Takashi

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan

• Migita Shinji

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan

• Endo Kazuhiko

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan

• O'uchi Shin-ichi

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan

• Morita Yukinori

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan

• Ota Hiroyuki

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan

• Ishikawa Yuki

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan

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