1/f Noise Characteristics of Fin-Type Field-Effect Transistors in Saturation Region

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概要

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• In this work, we measured 1/f noise of independent-double-gate- (IDG-) fin-type FET (FinFET) which has two independent gates. Flicker noise of common-double-gate- (CDG-) mode which both gates are applied with the same voltage and IDG-mode that has one gate voltage grounded and the other gate voltage applied with arbitrary voltage, and both result were compared with the same drain current (I_{\text{d}}). First, we measured relationship between characteristic of the normalized 1/f noise by I_{\text{d}} (S_{I_{\text{d}}}/I_{\text{d}}^{2}) and characteristic of I_{\text{d}}. Both the S_{I_{\text{d}}}/I_{\text{d}}^{2} of IDG- and CDG-modes show nearly equal values and tendency. Next, this work also shows the relationship between 1/f noise and vertical electric field (E_{\bot}) of surface of gate oxide film. As a result we could not definitely see a large margin of 1/f noise between CDG- and IDG-modes from E_{\bot}. This work also discovered that 1/f noise was greatly influenced by I_{\text{d}} density.

• 2013-04-25

著者

• MASAHARA Meishoku

  National Institute of Advanced Industrial Science and Technology

• LIU Yongxun

  National Institute of Advanced Industrial Science and Technology

• MATSUKAWA Takashi

  National Institute of Advanced Industrial Science and Technology

• ISHIKAWA Yuki

  National Institute of Advanced Industrial Science and Technology

• Endo Kazuhiko

  National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn

• Sakai Hideo

  Department Of Earth Sciences Faculty Of Science Toyama University

• Ishikuro Hiroki

  Department Of Electronics And Electrical Engineering Keio University

• Matsukawa Takashi

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

• Tsukada Junichi

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Masahara Meishoku

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

• Nakagawa Tadashi

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

• Sekigawa Toshihiro

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

• Koike Hanpei

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

• Ishikuro Hiroki

  Department of Electronics and Electrical Engineering, Keio University, Yokohama 223-8522, Japan

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