Fabrication of Polycrystalline Silicon Field Emitter Arrays with Hafnium Carbide Coating for Thin-Film-Transistor Controlled Field Emission Displays

スポンサーリンク

概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-06-30

著者

• Sato Takanobu

  University Of Tsukuba Tennoudai Tsukuba

• MATSUKAWA Takashi

  National Institute of Advanced Industrial Science and Technology

• NAGAO Masayoshi

  National Institute of Advanced Industrial Science and Technology

• KANEMARU Seigo

  National Institute of Advanced Industrial Science and Technology

• Matsukawa T

  National Institute Of Advanced Industrial Science And Technology

• SACHO Yutaka

  National Institute of Advanced Industrial Science and Technology

• ITOH Junji

  National Institute of Advanced Industrial Science and Technology

関連論文

• Focusing Characteristics of Double-Gated Field-Emitter Arrays with a Lower Height of the Focusing Electrode
• New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching
• Fabrication of a Vertical-Channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
• Property of Radiation-Induced Defects in Germanium Single Crystals
• Full Multiple-Scattering Approach to Na K-Edge XANES of NaCl-KCl Mixed Crystal
• Novel Process for High-Density Buried Nanopyramid Array Fabrication by Means of Dopant Ion Implantation and Wet Etching
• Nonscalability of Alpha-Particle-Induced Charge Collection Area
• Reverse-Mode Single Ion Beam Induced Charge (R-mode SIBIC) Imaging for the Test of Total Dose Effects in n-ch Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)
• Undiagnosed sick sinus syndrome manifest during combined general and cervical epidural anesthesia
• Optimization of Nitridation and Reoxidation Conditions for EEPROM^* Tunneling Dielectric
• A High Density High Performance Cell for 4M Bit Full Feature Electrically Erasable/Programmable Read-Only Memory
• Vertical Ultrathin-channel Multi-gate MOSFETs (MuGFETs) : Technological Challenges and Future Developments
• Investigation of N-Channel Triple-Gate MOSFETs on (100) SOI Substrate
• Close Observation of the Geometrical Features of an Ultranarrow Silicon Nanowire Device
• Point Defects in Cubic Boron Nitride after Neutron Irradiation
• Significant Increase in Blood Pressure after Discontinuation of Propofol Following Cardiac Surgery
• Single-Event Upset Test of Static Random Access Memory Using Single-Ion Microprobe
• Site Dependence of Soft Errors Induced by Single-Ion Hitting in 64 kbit Static Random Access Memory (SRAM)
• Optical Absorption in Silicon Oxide Film Near the SiO_2/Si Interface
• Optical Absorption in Ultrathin Silicon Oxide Film (SOLID STATE DEVICES AND MATERIALS 1)
• Fabrication of HfC-Coated Si Field Emitter Arrays with Built-in Poly-Si Thin-Film Transistor
• Fabrication of Polycrystalline Silicon Field Emitter Arrays with Hafnium Carbide Coating for Thin-Film-Transistor Controlled Field Emission Displays
• Mechanism of Tungsten Plug Corrosion during Chemical Stripping Process : Scanning Maxwell-Stress Microscopy and Electrochemical Potentiometry Studies
• Charging Damage of Silicon-on-Insulator (SOI) Wafer Determined by Scanning Maxwell-Stress Microscopy
• CHF_3 Plasma Treatment of Si Field Emitter Arrays For No Damage Vacuum Packaging
• Electrical Characteristics of Air-Bridge-Structured Silicon Nanowire Fabricated by Micromachining a Silicon-on-Insulator Substrate
• Fabrication of a Nanometer-Scale Si-Wire by Micromachining of a Silicon-on-Insulator Substrate
• Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal--Oxide--Semiconductor Field-Effect Transistors
• General Analytical Relationship for Electric Field of Gated Field Emitters
• Device Applied Fowler-Nordheim Relationship : Semiconductors
• A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors
• Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect on Device Characteristics
• Cationic Core Excitons in NaBr and MgBr_2
• Electron-Beam Focusing and Deflection Properties for Misaligned Dual Gate Field Emitters
• Field Emitter Magnetic Sensor with Steered Focused Electron Beam
• X-Ray K Absorption Edge Structures of Chlorine Ion in [CoCl_2(en)_2]NO_3,[CoCl_2(en)_2]Cl and [Co (en)_3]Cl_3・3H_2O
• Fabrication of a Vertical-Channel Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
• Investigation of Low-Energy Tilted Ion Implantation for Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Extension Doping
• Fabrication of a Field Emitter Array with a Built-in Einzel Lens
• Experimental Study of Floating-Gate-Type MetalOxideSemiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application (Special Issue : Microprocesses and Nanotechnology)
• Fabrication and Characterization of NOR-Type Tri-Gate Flash Memory with Improved Inter-Poly Dielectric Layer by Rapid Thermal Oxidation (Special Issue : Microprocesses and Nanotechnology)
• Fabrication of Floating-Gate-Type Fin-Channel Double- and Tri-Gate Flash Memories and Comparative Study of Their Electrical Characteristics
• Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium--Nitride Gate for High-Performance Fin-Type Metal--Oxide--Semiconductor Field-Effect Transistors
• Investigation of N-Channel Triple-Gate Metal–Oxide–Semiconductor Field-Effect Transistors on (100) Silicon On Insulator Substrate
• New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching
• Experimental Study of Effective Carrier Mobility of Multi-Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching
• Fabrication of HfC-Coated Si Field Emitter Arrays with Built-in Poly-Si Thin-Film Transistor
• Fabrication of Polycrystalline Silicon Field Emitter Arrays with Hafnium Carbide Coating for Thin-Film-Transistor Controlled Field Emission Displays
• Low Temperature, Beam-Orientation-Dependent, Lattice-Plane-Independent, and Damage-Free Oxidation for Three-Dimensional Structure by Neutral Beam Oxidation
• Characteristics of Ion-Induced Bending Phenomenon
• 1/f Noise Characteristics of Fin-Type Field-Effect Transistors in Saturation Region
• Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories
• Independent-Double-Gate FinFET SRAM Technology
• Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories (Special Issue : Microprocesses and Nanotechnology)

もっと見る 閉じる

スポンサーリンク