Device Applied Fowler-Nordheim Relationship : Semiconductors
スポンサーリンク
概要
- 論文の詳細を見る
A method for applying the Fowler-Nordheim (FN) relationship to analyze data pertaining to field emission (FE) devices is outlined. The emission current is obtained through integration of the FN current density over the emitter area, taking into account the local value of the electric field. The slope and intercept of the FN plots are used to plot the slope versus the intercept diagram, with emitter work function Ф and radius R as parameters. Each experimental current-voltage data set is represented in this diagram as a point inside the lattice of equi-Ф and equi-R lines, facilitating derivation of the actual Ф and R values. An analytical FE diode model and a numerical FE microtriode model are used to exemplify this approach. The method can be used as a convenient graphical tool to analyze the experimental results of FE.
- 社団法人応用物理学会の論文
- 2001-08-15
著者
-
Filip Valeriu
Universiiy Of Buchareg Faculty Of Physics
-
Filip V
Univ. Bucharest Bucharest‐magurele Rom
-
Itoh J
Aist Ibaraki Jpn
-
Itoh J
Nanoelectronics Research Institute Aist
-
Itoh Junji
Tsukuba Laboratory Yaskawa Electric Co. Ltd.
-
Okuyama Fumio
Department Of Environmental Technology Nagoya Institute Of Technology
-
ITOH Junji
National Institute of Advanced Industrial Science and Technology
-
Nicolaescu Dan
National Institute of Advanced Industrial Science & Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibara
-
NICOLAESCU Dan
Nanoelectronics Research Institute, AIST
-
Nicolaescu D.
Nanoelectronics Research Institute Aist
-
Itoh Junji
National Institute of Advanced Industrial Science & Technology (AIST)
関連論文
- Correlates of Physical Inactivity among Individuals with Physical Disabilities
- Nanoscale Evaluation of Structure and Surface Potential of Gated Field Emitters by Scanning Maxwell-Stress Microscope
- Fabrication of Cantilever with Ultrasharp and High-Aspect-Ratio Stylus for Scanning Maxwell-Stress Microscopy
- Fabrication of Metal-Oxide-Semiconductor Field-Effect-Transistor-Structured Silicon Field Emitters with a Polysilicon Dual Gate
- Fabrication of a New Si Field Emitter Tip with Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Structure
- A New Metal-Oxide-Semiconductor Field-Effect-Transistor-Structured Si Field Emitter Tip
- Emission Characteristics of Ion-Implanted Silicon Emitter Tips
- Low-Power Technology for GaAs Front-End ICs
- Fabrication of HfC-Coated Si Field Emitter Arrays with Built-in Poly-Si Thin-Film Transistor
- Fabrication of Polycrystalline Silicon Field Emitter Arrays with Hafnium Carbide Coating for Thin-Film-Transistor Controlled Field Emission Displays
- Mechanism of Tungsten Plug Corrosion during Chemical Stripping Process : Scanning Maxwell-Stress Microscopy and Electrochemical Potentiometry Studies
- CHF_3 Plasma Treatment of Si Field Emitter Arrays For No Damage Vacuum Packaging
- Electrical Characteristics of Air-Bridge-Structured Silicon Nanowire Fabricated by Micromachining a Silicon-on-Insulator Substrate
- Fabrication of a Nanometer-Scale Si-Wire by Micromachining of a Silicon-on-Insulator Substrate
- Field-Induced Oxidation of Tungsten Field Emitters
- General Analytical Relationship for Electric Field of Gated Field Emitters
- Oscillator Ionization Vacuum Gauge with Field Emitters
- Dual-Gate Electron Emission Structure with Nanotube-on-Emitter for X-Ray Generation
- Emission Characteristics of Amorphous Silicon Field Emitter Arrays Sealed in a Vacuum Package
- Fabrication of a New Field Emitter Array with a Built-in Thin-Film Transistor on Glass
- Fabrication of a Three-Dimensional Vacuum Magnetic Sensor with a Si Tip
- Fabrication of Si Field Emitter Tip for a Three-Dimensional Vacuum Magnetic Sensor
- Fabrication of Silicon Field Emitter Arrays Integrated with Beam Focusing Lens
- Fabrication of Field Emitter Arrays with Hydrogenated Amorphous Silicon on Glass
- Emission Statistics for HfC Emitter Arrays after Residual Gas Exposure
- Modeling of Focused Carbon Nanotube Array Emitters for Field-Emission Displays
- Modeling of Optimized Field Emission Nanotriodes with Aligned Carbon Nanotubes of Variable Heights
- Fabrication and Characterization of Comb-Shaped Lateral Field-Emitter Arrays
- Dendritic Needles of Tungsten on Thin Tungsten Wires Grown by Reduction of Tungsten Oxide
- Growth of Cr Needle Crystals Induced by Field Electron Emission
- Structural Change in Cr Microneedles Induced by Magnetic Field
- Device Applied Fowler-Nordheim Relationship : Semiconductors
- Low-Operation-Voltage Comb-Shaped Field Emitter Array
- Miniaturized Front-End HIC Using MBB Technology for Mobile Communication Equipment(Special Issue on Microwave and Millimeter-Wave Module Technology)
- Electron-Beam Focusing and Deflection Properties for Misaligned Dual Gate Field Emitters
- Electron-Beam Focusing and Deflection Properties for Misaligned Dual Gate Field Emitters
- Field Emitter Magnetic Sensor with Steered Focused Electron Beam
- Electron Motion Three-Dimensional Confinement for Microelectronic Vacuum Gauges with Field Emitters
- Field Emitter Magnetic Sensor with Steered Focused Electron Beam
- Focusing Properties of Volcano-Shaped Dual-Gate Field Emitters
- Focusing Properties of Volcano-Shaped Dual-Gate Field Emitters
- Focusing Properties of a Novel Dual-Gate Edge Emitter
- Fabrication of Silicon Field Emitter Arrays with 0.1-μm-Diameter Gate by Focused Ion Beam Lithography
- Fabrication of Petal-Shaped Vertical Field Emitter Arrays
- Fabrication and Characterization of Cross-Edge-Structured Vertical Field Emitter Arrays
- Vacuum Microtriode with Comb-Shaped Lateral Field-Emitter Array
- Low-Voltage Operation GaAs Receiver Front-End IC (Special Issue on Low-Power and High-Speed LSI Technologies)
- Visual Stimuli Eliciting Mate Refusal Posture in the Mated Female of the Cabbage White Butterfly, Pieris rapae crucivora (Lepidoptera: Pieridae)
- Probe Anode as a Characterization Tool for Field Emission Arrays
- Fabrication of HfC-Coated Si Field Emitter Arrays with Built-in Poly-Si Thin-Film Transistor
- Fabrication of Polycrystalline Silicon Field Emitter Arrays with Hafnium Carbide Coating for Thin-Film-Transistor Controlled Field Emission Displays