Emission Characteristics of Amorphous Silicon Field Emitter Arrays Sealed in a Vacuum Package
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概要
- 論文の詳細を見る
Emission characteristics of amorphous silicon field emitter arrays (a-Si FEAs) in a vacuum package sealed with TO-5 have been measured and evaluated. The TO-5 header mounted with a FEA, was inserted through a hole in a glass plate and was hermetically sealed to the glass plate using epoxy resin as a sealant. In the same a-Si EEA device, lower emission currents have been observed in the vacuum package, as compared with those measured in an ultra-high vacuum (UHV) chamber. On the other hand, an a-Si FEA monolithically integrated with a thin-film transistor (TFT) has exhibited almost the same emission characteristics both in the vacuum package and in the UHV chamber at the region of saturated emission currents due to the TFT function. A highly stable emission current of approximately 0.1 μA and with fluctuations of less than 2% has been achieved in the vacuum package at the TFT gate and the extraction voltages of 14 V and 150 V, respectively.
- 社団法人応用物理学会の論文
- 1999-12-30
著者
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ITOH Junji
Electrotechnical Laboratory
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KANEMARU Seigo
Electrotechnical Laboratory
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Kanemaru S
Aist Ibaraki Jpn
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Kanemaru Seigo
Nanoelectronics Research Institute Aist
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Kanemaru Seigo
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Kanemaru Seigo
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Kanemaru Seigo
Tsukuba Laboratory Yaskawa Electric Co. Ltd.
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Itoh J
Aist Ibaraki Jpn
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Itoh J
Nanoelectronics Research Institute Aist
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Itoh Junji
Tsukuba Laboratory Yaskawa Electric Co. Ltd.
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GAMO Hidenori
Technical Research Institute, Toppan Printing Co., Ltd.
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KAI Teruhiko
Technical Research Institute, Toppan Printing Co., Ltd.
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Kai Teruhiko
Technical Research Institute Toppan Printing Co. Ltd.
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Gamo Hidenori
Technical Research Institute Toppan Printing Co. Ltd.
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Kanemaru Seigo
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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