Novel Process for Vertical Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) Fabrication
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-06-30
著者
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MASAHARA Meishoku
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Maeda T
Advanced Industrial Sci. And Technol. Ibaraki Jpn
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MATSUKAWA Takashi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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SAKAMOTO Kunihiro
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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ISHII Kenichi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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SUZUKI Eiichi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Ishii K
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Kanemaru Seigo
Nanoelectronics Research Institute Aist
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Kanemaru Seigo
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Kanemaru Seigo
Tsukuba Laboratory Yaskawa Electric Co. Ltd.
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LIU Yongxun
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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TANOUE Hisao
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Suzuki E
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Tanoue H
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Tanoue H
National Institute Of Advanced Industrial Science And Technology (aist)
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