Optical-Heterodyne Detection of Mask-to-Wafer Displacement for Fine Alignment
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概要
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The lateral displacement between a mask and a wafer was measured by a newly developed optical-heterodyne method using three symmetrically-arranged gratings. This method is based on variation of the diffraction efficiency of a grating with the polarization of the incident light. With a 0.72 μm-period-grating system and a He-Ne transverse-mode Zeeman laser (wave-length=0.6328 μm), sensitivity better than 1°/0.01 μm was obtained and displacement smaller than 0.005 μm was detected independent of the mask-wafer gap variations. The principle and experimental results are described.
- 社団法人応用物理学会の論文
- 1986-08-20
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