Miniaturized Front-End HIC Using MBB Technology for Mobile Communication Equipment(Special Issue on Microwave and Millimeter-Wave Module Technology)
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概要
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Highly miniaturization technology in frontend GaAs Hybrid IC for mobile communication equipment will be presented. A combination of MBB(micro bump bonding)technology and the new GaAs IC fabrication process using high dielectric constant(ε_γ)thin film technology has achieved a super small HIC with low cost and low power consumption. The new HIC was constructed of only a ceramic substrate in which the spiral inductors were formed on it and the GaAs IC chip that was bonded by using MBB technology. The MBB technology lead the HIC to a lower temperature process without soldering, a smaller bump diameter, at shorter intervals and the lowest parasitic in the bump. The advantage of the small bonding pad of the IC contributes to miniaturize the IC chip and reduces the chip cost. The GaAs IC process technology using high-ε_γ thin film achieves the integration of all capacitors in the IC without increasing the chip size. Furthermore, low power consumption was achieved by 0.5-μm LDD BP-MESFET with a high κ-value. Although capacitors were integrated on the IC, all of the inductors were formed on the top of the ceramic substrate using a thin film metal process. This was used due to its large occupation area when it was integrated on the IC, and produced a low Q-factor. As a results, the chip was minimized to a size of 0.8×1.0mm^2 and achieved a low-cost chip. Two types of HICs were fabricated for 880MHz cellular band and 1.9GHz PHS(Personal Handy phone System)band. the HIC at 880MHz measures only 5.0×5.0×1.0mm^3, and offered a conversion gain of 25dB, a noise figure of 4.2dB and an image rejection ratio of 12dB at 2.7V and at a power supply of 3.5mA. The HIC for 1.9GHz measures only 3.5×4.0×1.0mm^3, and showed a conversion gain of 16.0dB, a II P3 of-16.0dBm, and an image rejection, ratio of over 20dBc at 3.0V and at power supply of 4.5mA.
- 社団法人電子情報通信学会の論文
- 1998-06-25
著者
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Ishikawa Osamu
群馬大学 医学系研究科皮膚科学
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Ishikawa O
Matsushita Electronics Corp. Moriguchi‐shi Jpn
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ITOH Junji
Electrotechnical Laboratory
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Ishikawa O
Departments Of Dermatology Gunma University Graduate School Of Medicine
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Itoh J
Aist Ibaraki Jpn
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Itoh J
Nanoelectronics Research Institute Aist
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Itoh Junji
Tsukuba Laboratory Yaskawa Electric Co. Ltd.
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NISHITSUJI Mitsuru
Electronics Research Laboratory, Matsushita Electronics Corporation
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YOSHIDA Takayuki
Production Engineering Center, Matsushita Electronics Corportation
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Nishitsuji M
Matsushita Electronics Corp. Nagaokakyo‐shi Jpn
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NAKATSUKA Tadayoshi
Electronics Research Laboratory, Matsushita Electronics Corporation
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UDA Tomoya
Electronics Research Laboratory, Matsushita Electronics Corporation
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ISHIKAWA Osamu
Electronics Research Laboratory, Matsushita Electronics Corporation
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Uda Tomoya
Electronics Research Laboratory Matsushita Electronics Corporation
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Nisijima Masaaki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Nakatsuka Tadayoshi
Electronics Research Laboratory Matsushita Electronics Corporation
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Yoshida Takayuki
Production Engineering Center Matsushita Electronics Corporation
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