AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire(Session9B: GaN and SiC Device Process Technology)
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概要
- 論文の詳細を見る
We present K-band AlGaN/GaN HFET MMIC amplifiers on sapphire substrates. Integrated AlGaN/GaN HFETs have superlattice capping layers which successfully reduce series resistance. A typical HFET shows f_<max> of 161GHz and NF_<min> of 2.5dB at 28GHz. The first demonstration of GaN based K-band MMIC is 2-stage amplifier with coplanar waveguide transmission line, which exhibits a small signal gain of 13dB at 21.6GHz. Further increase of the gain is achieved by 3-stage amplifier MMIC which include microstrip lines with via-holes. The via-holes are fabricated onto chemically stable sapphire by newly proposed laser drilling technique. The compact 3-stage amplifier exhibits a small-signal gain as high as 22dB at 26GHz with a 3dB bandwidth of 4GHz. The presented K-band MMIC would be applicable to future millimeter-wave communication systems.
- 社団法人電子情報通信学会の論文
- 2008-07-02
著者
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LI Ming
Panasonic Boston Laboratory, Panasonic Technologies Company
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Li Ming
Panasonic Boston Laboratory Panasonic Technologies Company
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Murata Tomohiro
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Tanaka Tsuyoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Nagai Shuichi
Panasonic Boston Laboratory, Panasonic Technologies Company
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Ishida Hidetoshi
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Yanagihara Manabu
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Ueda Tetsuzo
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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NISHIJIMA Masaaki
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Terahara Takafumi
The Authors Are With Optoelectronic Systems Laboratory Network System Laboratories Fujitsu Laborator
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Tanaka T
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Sakai Hiroyuki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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KURODA Masayuki
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Ueda Tetsuzo
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Nagai Shuichi
Panasonic Boston Laboratory Panasonic Technologies Company
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Kuroda Masayuki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Nishitsuji M
Matsushita Electronics Corp. Nagaokakyo‐shi Jpn
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Ishida Hidetoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Ishida Hidetoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Yanagihara M
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Yanagihara Manabu
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Nisijima Masaaki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Tanaka Tsuyoshi
Semiconductor Device Research Center Matsushita Electronics Corporation
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