0.15-μm T-Shaped Gate MODFETs Using BCB as Low-k Spacer (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)

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概要

• 論文の詳細を見る

• We report 0.15-μm T-shaped gate MODFETs using BCB (Benzocyclobutene) as low-k spacer dielectric material. The RF performance of pseudomorphic MODFET was improved by reducing the gate fringing capacitance using low-k material. The BCB film was deposited by plasma CVD technique at 100℃ and was patterned by lift-off technique. The dielectric constant of BCB film deposited by plasma CVD was confirmed 2.7, which is equal to that of spin-coated BCB, and is 35% lower than that of conventional SiO_2. The leakage current was 4.7 x 10^-5 A/cm^2 at 3.6 MV/cm and was low enough for spacer material. 0.15-μm T-shaped gate MODFETs were fabricated by using BCB spacer and phase-shift lithography technique. More than 20 GHz increase of F_max was obtained in comparison with conventional SiO_2 spacer by reducing the gate fringing capacitance.

• 社団法人電子情報通信学会の論文
• 2001-10-01

著者

• NISHITSUJI Mitsuru

  Semiconductor Research Center, Matsushita Electric Industrial Co, Ltd.

• Tanaka Tsuyoshi

  Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.

• Anda Y

  Matsushita Electronics Corp. Nagaokakyo‐shi Jpn

• ANDA Yoshiharu

  Semiconductor Device Research Center, Matsushita Electronics Corporation

• KAWASHIMA Katsuhiko

  Semiconductor Device Research Center, Matsushita Electronics Corporation

• Nishitsuji Mitsuru

  Semiconductor Device Research Center Matsushita Electronics Corporation

• Kawashima Katsuhiko

  Traffic Research Center Ntt Advanced Technology Corp.;department Of Computer Information And Communi

• Tanaka Tsuyoshi

  Semiconductor Device Research Center Matsushita Electronics Corporation

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