Tanaka Tsuyoshi | Semiconductor Device Research Center Matsushita Electronics Corporation

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概要

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著作論文

First-Principles Calculation of Bandgap Bowing Parameter for Wurtzite InAlGaN Quaternary Alloy using Large Supercell
High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure(Heterostructure Microelectronics with TWHM2003)
AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire(Session9B: GaN and SiC Device Process Technology)
AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire(Session9B: GaN and SiC Device Process Technology)
Enhancement-Mode n-Channel GaN MOSFETs Using HfO_2 as a Gate Oxide
Normally-off AlGaN/GaN MIS-HFETs Using Non-polar a-Plane
Normally-off Operation of Non-polar AlGaN/GaN Heterojunction FETs Grown on R-plane Sapphire
Temperature Compensation Technique of InGaP/GaAs Power HBT with Novel Bias Circuit Using Schottky Diodes(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
Improvement of Breakdown Voltages in GaN Schottky Barrier Diodes by Pseudo-Superjunction Structures
A 26 GHz Transceiver Chipset for Short Range Radar Using Post-Passivation Interconnection
High-Brightness Ultraviolet LEDs on Si Using Quaternary InAlGaN Multi-Quantum-Wells with High Indium Contents
0.15-μm T-Shaped Gate MODFETs Using BCB as Low-k Spacer (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
200 W Output Power at S-Band in AlGaN/GaN Heterojunction Field Effect Transistors with Field Plates on Si Substrates
Chemical and Potential Bending Characteristics of SiNx/AlGaN Interfaces Prepared by In Situ Metal-Organic Chemical Vapor Deposition
Effects of Deep Trapping States at High Temperatures on Transient Performance of AlGaN/GaN Heterostructure Field-Effect Transistors
K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W

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