Kuroda Masayuki | Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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概要
- KURODA Masayukiの詳細を見る
- 同名の論文著者
- Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.の論文著者
関連著者
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Ueda Tetsuzo
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Kuroda Masayuki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Tanaka Tsuyoshi
Semiconductor Device Research Center Matsushita Electronics Corporation
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Tanaka Tsuyoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Ueda Tetsuzo
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Terahara Takafumi
The Authors Are With Optoelectronic Systems Laboratory Network System Laboratories Fujitsu Laborator
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Tanaka T
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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KURODA Masayuki
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Murata Tomohiro
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Ishida Hidetoshi
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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NISHIJIMA Masaaki
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Sakai Hiroyuki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Ishida Hidetoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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LI Ming
Panasonic Boston Laboratory, Panasonic Technologies Company
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Li Ming
Panasonic Boston Laboratory Panasonic Technologies Company
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Nagai Shuichi
Panasonic Boston Laboratory, Panasonic Technologies Company
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Yanagihara Manabu
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Nagai Shuichi
Panasonic Boston Laboratory Panasonic Technologies Company
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Nishitsuji M
Matsushita Electronics Corp. Nagaokakyo‐shi Jpn
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Ishida Hidetoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Yanagihara M
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Yanagihara Manabu
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Nisijima Masaaki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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MIZUTANI Takashi
Department of Quantum Engineering, Nagoya University
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Mizutani Takashi
Department Of Health Sciences Yamanashi Medical University
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Mizutani Takashi
Department Of Quantum Engineering Nagoya University
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KISHIMOTO Shigeru
Department of Quantum Engineering, Nagoya University
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Kishimoto Shigeru
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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SUGIURA Shun
Department of Quantum Engineering, Nagoya University
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Sugiura Shun
Department Of Quantum Engineering Nagoya University
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ANDA Yoshiharu
Semiconductor Device Research Center, Matsushita Electronics Corporation
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Mizutani Takashi
Department Of Electronics Faculty Of Engineering Nagoya University
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Mizutani Takashi
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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UEDA Tetsuzo
Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation
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MURATA Tomohiro
Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation
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NEGORO Noboru
Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation
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NISHIJIMA Masaaki
Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation
著作論文
- AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire(Session9B: GaN and SiC Device Process Technology)
- AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire(Session9B: GaN and SiC Device Process Technology)
- Enhancement-Mode n-Channel GaN MOSFETs Using HfO_2 as a Gate Oxide
- Normally-off AlGaN/GaN MIS-HFETs Using Non-polar a-Plane
- Normally-off Operation of Non-polar AlGaN/GaN Heterojunction FETs Grown on R-plane Sapphire
- K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W