Nishitsuji M | Matsushita Electronics Corp. Nagaokakyo‐shi Jpn

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著作論文

Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure(Heterostructure Microelectronics with TWHM2003)
AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire(Session9B: GaN and SiC Device Process Technology)
AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire(Session9B: GaN and SiC Device Process Technology)
Temperature Compensation Technique of InGaP/GaAs Power HBT with Novel Bias Circuit Using Schottky Diodes(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
Low Power Dissipation Single-Supply MMIC Power Amplifier for 5.8 GHz Electronic Toll Collection System (Special Issue on High-Frequency/speed Devices in the 21st Century)
High-Current and High-Transconductance Self-Aligned P^+-GaAs Junction HFET of Complete Enhancement-Mode Operation
Annealing Behavior of Low-Temperature-Deposited SrTiO_3 Capacitor
Miniaturized Front-End HIC Using MBB Technology for Mobile Communication Equipment(Special Issue on Microwave and Millimeter-Wave Module Technology)
Low-Voltage Operation GaAs Receiver Front-End IC (Special Issue on Low-Power and High-Speed LSI Technologies)

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