Ueda Daisuke | Semiconductor Device Research Center Matsushita Electronics Corporation

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Novel High Precision Optoelectronic Device Fabrication Technique Using Guided Fluidic Assembly
Dual-Wavelength High-Power Laser Diodes Fabricated by Selective Fluidic Self-Assembly
High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure(Heterostructure Microelectronics with TWHM2003)
Dynamic Gate Voltage Characteristic of the Super Self-Aligned Shunt GaAs FET(Special Issue on Low-Distortion, High-Power, High-Efficiency Active Device and Circuit Technology)
High-Extraction-Efficiency Blue Light-Emitting Diode Using Extended-Pitch Photonic Crystal
Integrated Catadioptric Pickup with Ferrofluidic Cooling Structure

スポンサーリンク