Mizutani Takashi | Department Of Electronics Faculty Of Engineering Nagoya University

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Dual-Wavelength High-Power Laser Diodes Fabricated by Selective Fluidic Self-Assembly
Dual wavelength high power laser diodes fabricated by Selective Fluidic Self-Assembly technique
Fabrication of Carbon Nanotube Field Effect Transistors Using Plasma-Enhanced Chemical Vapor Deposition Grown Nanotubes
Fabrication and Characterization of Peapod Field-Effect Transistors Using Peapods Synthesized Directly on Si Substrate
Tunable Field-Effect Transistor Device with Metallofullerene Nanopeapods
Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
Fabricated on a GaAs-based Semiconductor-on-Insulator Substrate Using a Spin-On Low-k Dielectric Film
Electroluminescence in AlGaN/GaN High Electron Mobility Transistors under High Bias Voltage (Short Note)
Temperature Distribution Measurement in AlGaN/GaN High-Electron-Mobility Transistors by Micro-Raman Scattering Spectroscopy : Semiconductors
Fabrication of vertically-aligned CNT electrodes using plasma-enhanced CVD for chemical sensors
A questionnaire survey of hand dermatitis among Japanese nursing students
Hand Dermatitis and Musculoskeletal Disorders among Female Nursing Students in Japan
Enhancement-Mode n-Channel GaN MOSFETs Using HfO_2 as a Gate Oxide
High-Speed Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit
Robust Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit
Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of n^+ Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transistors
Electroluminescence Measurement of n^+ Self-Alighed Gate GaAs MESFETs
Electroluminescence Measurement of n Self-Aligned GaAs MESFETs
Thermal Expansion Coefficient of Boron Monophosphide
Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy
Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy
Kelvin Probe Force Microscopy for Potential Distribution Measurement of Cleaved Surface of GaAs Devices
Kelvin Probe Force Microscopy for Potential Distribution Measurement of Cleaved Surface of GaAs Devices
Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer
bcl-2 Expression on Prostate Cancer and its Relationship to Cell Cycle and Prognosis
Atomic Force Microscopy and Kelvin Probe Force Microscopy Measurements of Semiconductor Surface Using Carbon Nanotube Tip Fabricated by Electrophoresis
AFM and KFM Measurements of Semiconductor Surface Using Carbon Nanotube Tip Fabricated by Electrophoresis
Measurement of Cross-Sectional Potential of InAlAs/InGaAs Layered Structures in Vacuum by Kelvin Probe Force Microscopy
High-Performance Top-Gate Carbon Nanotube Field-Effect Transistors and Complementary Metal-Oxide-Semiconductor Inverters Realized by Controlling Interface Charges
Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
Vapor Etching of Boron Monophosphide by Gaseous Hydrogen Chloride
Photoluminescence Study of Resonant Tunneling Transistor with p^+/n-Junction Gate
Measurement of Contact Potential of GaAs pn Junctions by Kelvin Probe Force Microscopy
Measurement of Contact Potential of GaAs/AlGaAs Heterostructure Using Kelvin Probe Force Microscopy
Effect of Growth Parameters on the Epitaxial Growth of BP on Si Substrate
Microscopic Photoluminescence Study of InAs Single Quantum Dots Grown on (100) GaAs

もっと見る

スポンサーリンク