Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer
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概要
- 論文の詳細を見る
We have fabricated AlGaN/GaN HEMTs with a thin InGaN cap layer to implement normally-off HEMTs with a small extrinsic source resistance. The key idea is to employ the polarization-induced field in the InGaN cap layer, by which the conduction band is raised leading to the normally-off operation. Fabricated HEMT with an In0.2Ga0.8N cap layer with a thickness of 5nm showed normally-off operation with a threshold voltage of 0.4V and a maximum transconductance of 85mS/mm for the device with a 1.9-μm-long gate. By etching-off the In0.2Ga0.8N cap layer at the region except under the gate using gate and ohmic electrodes as etching masks, the sheet resistance has decreased from 2.7 to 0.75kΩ/_??_, and the maximum transconductance has increased from 85 to 130mS/mm due to a reduction of the extrinsic source resistance. The transconductance was increased from 130 to 145mS/mm by annealing the devices at 250°C for 20 minutes in a N2 atmosphere.
- （社）電子情報通信学会の論文
- 2008-07-01
著者
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ITO Masafumi
Department of Pathology, Japanese Red Cross Nagoya Daiichi Hospital
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MIZUTANI Takashi
Department of Quantum Engineering, Nagoya University
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Mizutani Takashi
Department Of Quantum Engineering Nagoya University
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KISHIMOTO Shigeru
Department of Quantum Engineering, Nagoya University
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Kishimoto Shigeru
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Ito Masafumi
Department Of Quantum Engineering Nagoya University
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NAKAMURA Fumihiko
POWDEC K.K.
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Ito Masafumi
Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Meijo Universi
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Mizutani Takashi
Department Of Electronics Faculty Of Engineering Nagoya University
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Mizutani Takashi
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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