Enhancement-Mode n-Channel GaN MOSFETs Using HfO_2 as a Gate Oxide

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概要

• 論文の詳細を見る

• We have fabricated enhancement-mode n-channel GaN MOSFETs with overlap gate structure on a p-GaN using thick HfO2 as a gate insulator. The maximum transconductance of 23mS/mm which is 4 times larger, to our knowledge, than the best-reported value of the normally-off GaN MOSFETs with SiO2 gate oxide has been obtained.

• （社）電子情報通信学会の論文
• 2008-07-01

著者

• MIZUTANI Takashi

  Department of Quantum Engineering, Nagoya University

• Mizutani Takashi

  Department Of Health Sciences Yamanashi Medical University

• Mizutani Takashi

  Department Of Quantum Engineering Nagoya University

• KISHIMOTO Shigeru

  Department of Quantum Engineering, Nagoya University

• Tanaka Tsuyoshi

  Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.

• Ueda Tetsuzo

  Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd

• Kishimoto Shigeru

  Department Of Electrical Engineering Faculty Of Engineering Nagoya University

• Terahara Takafumi

  The Authors Are With Optoelectronic Systems Laboratory Network System Laboratories Fujitsu Laborator

• Tanaka T

  Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.

• KURODA Masayuki

  Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd

• SUGIURA Shun

  Department of Quantum Engineering, Nagoya University

• Sugiura Shun

  Department Of Quantum Engineering Nagoya University

• Ueda Tetsuzo

  Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.

• Kuroda Masayuki

  Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.

• Mizutani Takashi

  Department Of Electronics Faculty Of Engineering Nagoya University

• Mizutani Takashi

  Department Of Electrical Engineering Faculty Of Engineering Nagoya University

• Tanaka Tsuyoshi

  Semiconductor Device Research Center Matsushita Electronics Corporation

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