Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure(<Special Issue>Heterostructure Microelectronics with TWHM2003)
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概要
- 論文の詳細を見る
InCaP/GaAs HBT with novel ledge coupled capacitor (LCC) structure has been proposed and demonstrated for the first time. The LCC employs an extrinsic InGaP ledge layer as a capacitor parallel to the hase resistor This configuration enahles feeding RE signals directly into the base without passing them through the base resistor. With the fahricated RBT, no increase of leakage current between emitter and base electrode was observed. The maximum oscillation frequency (f_<max>) of the HBT was improved hy 10 GHz as compared with an HBT without the LCC.
- 社団法人電子情報通信学会の論文
- 2003-10-01
著者
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Ueda Daisuke
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Ueda D
Matsushita Electronics Corp. Takatsuki‐shi Jpn
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Tanaka Tsuyoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Tsurumi Naohiro
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Yanagihara Manabu
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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ISHII Motonori
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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NISHIJIMA Masaaki
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Terahara Takafumi
The Authors Are With Optoelectronic Systems Laboratory Network System Laboratories Fujitsu Laborator
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Ueda Daisuke
Semiconductor Device Research Center Matsushita Electronics Corporation
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Ueda Daisuke
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Tanaka T
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Ishii Motonori
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Nishitsuji M
Matsushita Electronics Corp. Nagaokakyo‐shi Jpn
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Yanagihara M
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Yanagihara Manabu
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Nisijima Masaaki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Tanaka Tsuyoshi
Semiconductor Device Research Center Matsushita Electronics Corporation
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