A 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-02-01
著者
-
Kondow M
Central Research Laboratory Hitachi Ltd.
-
KONDOW Masahiko
Central Research Laboratory, Hitachi, Ltd.
-
KITATANI Takeshi
RWCP Optical Interconnection Hitachi Laboratory co Central Research Laboratory, Hitachi, Ltd.
-
NAKAHARA Koji
RWCP Optical Interconnection Hitachi Laboratory
-
UOMI Kazuhisa
The author is with Optical Device Department, Telecommunications System Group, Hitachi Ltd.
-
Kondow M
Hitachi Ltd. Tokyo Jpn
-
Kondow Masahiko
Central Research Laboratory Hitachi Ltd.
-
Kondow Masahiko
Graduate School Of Engineering Osaka University
-
Tanaka T
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
-
TANAKA Toshiaki
o Central Research Laboratory, Hitachi, Ltd.
-
NAKAHARA Kouji
o Central Research Laboratory, Hitachi, Ltd.
-
UOMI Kazuhisa
RWCP Optical Interconnection Hitachi Laboratory, c
-
Tanaka T
Kddi R & D Laboratories Inc.
-
Uomi K
The Author Is With Optical Device Department Telecommunications System Group Hitachi Ltd.
-
Kitatani T
Hitachi Ltd. Central Research Laboratory
-
Kitatani Takeshi
Rwcp Optical Interconnection Hitachi Laboratory C-o Central Research Laboratory Hitachi Ltd.
-
Nakahara Kouji
Fundamental And Environmental Research Laboratories Nec Corporation
-
TANAKA Toshiaki
o Central Research Laboratory, Hitachi Ltd.
関連論文
- Gap Diffie-Hellman署名に基づいた階層表記型多重署名方式(情報セキュリティ,ライフログ活用技術,ライフインテリジェンス,オフィス情報システム,一般)
- 回覧文書閲覧確認に適した階層表記型多重署名方式の提案と実装評価(社会基盤としてのインターネットアーキテクチャ論文)
- Amplified Spontaneous Enission Measurement of GaInNAs Laser Wafers With and without Rapid Thermal Annealing
- Variation in Photoluminescence of Highly Strained GaInNAs/GaAs Multiple-Quantum-Well Structures with Different Thickness GaAs Barrier Layers(Semiconductors)
- Transition of Infrared Absorption Peaks in Thermally Annealed GaInNAS : Optics and Quantum Electronics : Optical Properties of Condensed Matter
- Analysis of Band Offset in GaNAs/GaAs by X-Ray Photoelectron Spectroscopy
- Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GaIn N As/GaAs Single Quantum Well Laser Diode
- Index-Guide GaInNAs Laser Diode for Optical Communications
- Characterization of the Refractive Index of Strained GaInNAs Layers by Spectroscopic Ellipsometry
- Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance
- B-19-16 ポインタ変数の符号化による難読化方式(B-19.ネットワークソフトウェア,一般セッション)
- A-7-9 SCHにおけるメッセージ入力(A-7.情報セキュリティ,一般セッション)
- Gap Diffie-Hellman署名に基づいた階層表記型多重署名方式(情報セキュリティ,ライフログ活用技術,ライフインテリジェンス,オフィス情報システム,一般)
- Pre- and Post-Dispersion Compensation in Long-Haul WDM Transmission System
- High Alumina Co-Doped Silica EDFA and Its Gain-Equalization in Long-Haul WDM Transmission System
- Gain Equalizer in Long-Haul WDM Transmission System(Special Issue on High-Capacity WDM/TDM Networks)
- ストリーム暗号K2に対するサイドチャネル攻撃と対策手法
- B-19-23 任意型の変数の符号化による難読化方式(B-19.ネットワークソフトウェア,一般セッション)
- Numerical Analysis of Beam-Expanders Integrated with Laser Diodes(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
- Beam Expander-Integrated Lasers Grown by Single-Step MOVPE
- Nitrogen Gas Flow Driven Unintentional Incorporation of Al during the Growth of Dilute Nitride Semiconductor by Plasma-Assisted Molecular Beam Epitaxy
- B-18-4 非接触型掌紋認証を用いたリモート認証システムの提案(B-18.バイオメトリックシステムセキュリティ,一般セッション)
- A Novel Error Control Algorithm for Reducing Transmission Delay in Real-Time Mobile Video Communication (Special Issue on Multimedia Mobile Communication Systems)
- Characteristics of Video Communication System in Mobile Radio Channel (Special Issue on Mobile Computing)
- A Study on Reducing Transmission Delay in Mobile Video Communication Systems (Special Section on Mutli-dimensional Mobile Information Network)
- A Novel Coherent Preambleless Demodulator Employing Sequential Processing for PSK Packet Signals : AFC and Carrier Recovery Circuits
- A Fast Synchronization Scheme of OFDM Signals for High-Rate Wireless LAN
- Nomadic Computing Environment Employing Wired and Wireless Networks(Special Issue on Multimedia Communications in Heterogeneous Network Environments)
- A Multi-Slot Access Protocol for TDMA-TDD Packet Radio Channel - Application to PHS Packet Data System -
- Interference Cancellation Characteristics of a BSCMA Adaptive Array Antenna with a DBF Configuration
- Implementation of a Digital Signal Processor in a DBF Self-Beam-Steering Array Antenna
- An ASIC Implementation Scheme to Realize a Beam Space CMA Adaptive Array Antenna
- Universally composable client-to-client general authenticated key exchange (特集:情報システムを支えるコンピュータセキュリティ技術の再考)
- B-19-18 難読化に基づくソフトウェア盗用の検知手法(B-19.ネットワークソフトウェア,一般セッション)
- A-7-9 SCHにおけるメッセージ入力関数の比較(A-7.情報セキュリティ,一般セッション)
- A-7-3 鍵交換プロトコルの安全性検証手法の実装(A-7.情報セキュリティ,一般セッション)
- A-7-2 環境に応じた暗号プロトコルの動的変更方式の提案(A-7. 情報セキュリティ,一般セッション)
- L-035 鍵交換プロトコルの安全性の検証ポイントに関する検討(ネットワーク・セキュリティ,一般論文)
- High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
- High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
- Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure(Heterostructure Microelectronics with TWHM2003)
- A Compact Plastic Package with High RF Isolation by Subsidiary Inner Ground Leads (Special Issue on High-Frequency/speed Devices in the 21st Century)
- In Situ X-Ray Monitoring of Metalorganic Vapor Phase Epitaxy
- Improved Self-Aligned Structure for GaAlAs High-Power Lasers
- B-7-31 携帯電話上でのアイデンティティ管理技術に関する検討(B-7.情報ネットワーク,一般セッション)
- AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire(Session9B: GaN and SiC Device Process Technology)
- AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire(Session9B: GaN and SiC Device Process Technology)
- Enhancement-Mode n-Channel GaN MOSFETs Using HfO_2 as a Gate Oxide
- Normally-off AlGaN/GaN MIS-HFETs Using Non-polar a-Plane
- Normally-off Operation of Non-polar AlGaN/GaN Heterojunction FETs Grown on R-plane Sapphire
- Characteristics of Built-In Folded Monopole Antenna for Handsets(2004 International Symposium on Antennas and Propagation)
- Analysis of Built-In Antennas for Handsets by the Electromagnetic Simulators(Analytical and Simulation Methods for Electromagnetic Wave Problems)
- Temperature Compensation Technique of InGaP/GaAs Power HBT with Novel Bias Circuit Using Schottky Diodes(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Recent Progress in GaInNAs Laser(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
- A 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K
- A 1.3-μm GaInNAs Laser Diode with a Lifetime of over 1000 Hours
- ワンセグ放送向けストリーム認証方式
- Advanced SOI Devices Using CMP and Wafer Bonding
- Universally Composable Hierarchical Hybrid Authenticated Key Exchange(Protocols,Cryptography and Information Security)
- Review on Sufficient Conditions of SHA-0
- Proposal of a Transformation Method for Iris Codes in Iris Scanning Verification(Biometrics)(Cryptography and Information Security)
- Investigations of Optimum Tier Architectures for ASICs(VLSI Design Technology and CAD)
- Toward the Practical Uses of Holonic Manufacturing Systems(Concurrent System Technology)
- Toward the Practical Uses of Holonic Manufacturing Systems
- Information Geometry of Mean Field Theory
- Photocurrent and Photoluminescence in InGaAs/GaAs Multiple Quantum Well Solar Cells
- Vertical Transport Properties of Photogenerated Carrier in InGaAs/GaAs Strained Multiple Quantum Welts
- Reduced Static Dielectric Constant Estimated from Exciton Binding Energy in Dilute Nitride Semiconductors
- Design of Self-Delegation for Mobile Terminals (特集 多様な社会的責任を担うコンピュータセキュリティ技術)
- Design of Security Architecture for Beyond 3G Mobile Terminals (特集:プライバシを保護するコンピュータセキュリティ技術)
- Investigation of the Electron Nonradiative Transition in Extremely Thin GaInNAs/GaAs Single Quantum Well by Using a Piezoelectric Photothermal Spectroscopy
- Direct Wafer Bonding Technique Aiming for Free-Material and Free-Orientation Integration of Semiconductor Materials
- Unintentional source incorporation in plasma-assisted molecular beam epitaxy
- Improvement of Breakdown Voltages in GaN Schottky Barrier Diodes by Pseudo-Superjunction Structures
- Effect of plasma conditions on the growth of GaNAs by plasma-assisted molecular-beam epitaxy
- Polarized Raman Spectra and N-Related Local Vibrational Mode in GaNAs and GaInNAs Epitaxial Layers Grown on GaAs
- Infrared Absorption Spectrum of GaInNAs
- Excitation Intensity Dependence of Photoluminescence Spectra in GaInNAs Single Quantum Wells (Short Note)
- Index-Guide GaInNAs Laser Diode for Optical Communications
- High-Speed and Low-Power n^+-p^+ Double-Gate SOI CMOS
- GaInNAs:A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
- High Power Organic Radical Battery for Information Systems(Electrochemical of Organic Materials)(Recent Progress in Organic Molecular Electronics)
- Synthesis and Electrochemical Characterization of a Polyradical Cathode Material for Rechargeable Batteries(Special Issue on Recent Progress in Organic Molecular Electronics)
- Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication
- Implementation and Evaluation of a Micropayment System for Mobile Environments (Security and Society)
- New Time-Stamping Scheme Using Mutual Communications with Pseudonymous Clients (Applications) (Cryptography and Information Security)
- High-Reflectivity InGaP/GaAs Multilayer Reflector Grown by MOCVD for Highly Reliable 0.98-μm Vertical-Cavity Surface-Emitting Lasers
- Reduction of $S$-parameter by the Introduction of Nitrogen in GaNAs: Positron Annihilation and Photoluminescence Spectroscopy Study
- Gas-Source Molecular Beam Epitaxy of GaN_xAs_ Using a N Radical as the N Source
- First Lasing Operation of Aluminum-Free 0.98-μm-Range InGaAs/InGaP/GaAs Vertical-Cavity Surface-Emitting Lasers
- Estimation of Low Ga-Content (Less Than 10%) in A1GaAs by Spectroscopic Ellipsometry
- Polarized Raman Spectra and N-Related Local Vibrational Mode in GaNAs and GaInNAs Epitaxial Layers Grown on GaAs
- Introduction of GaInNAs Gain Medium into Circularly Arranged Photonic Crystal Cavity
- Unintentional Source Incorporation in Plasma-Assisted Molecular Beam Epitaxy
- Amplified Spontaneous Emission Measurement of GaInNAs Laser Wafers with and without Rapid Thermal Annealing
- Over 1.5 μm Deep Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication
- Infrared Absorption Spectrum of GaInNAs
- Characterization of the Oxide Film Obtained by Wet Oxidation of Al-Rich AlGaAs
- Investigation of the Electron Nonradiative Transition in Extremely Thin GaInNAs/GaAs Single Quantum Well by Using a Piezoelectric Photothermal Spectroscopy
- Over 1.5μm Deep Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication (Special Issue : Solid State Devices and Materials)