Introduction of GaInNAs Gain Medium into Circularly Arranged Photonic Crystal Cavity

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概要

• 論文の詳細を見る

• We investigate the function of a circularly arranged submicron-scale optical cavity having a GaInNAs gain medium introduced into a two-dimensional photonic crystal slab. GaInNAs gain shows negligible optical degradations due to process damage, probably because of the small surface recombination velocity of the material. The preserved optical property realizes the observation of spectral peaks related to the cavity mode at wavelengths close to 1.3 μm. Moreover, the cavity shows fine tunability of its characteristics via the deliberate adjustment of its structure.

• 2011-10-25

著者

• Kondow Masahiko

  Graduate School Of Engineering Osaka University

• Ishikawa Fumitaro

  Graduate School Of Electronics And Information Engineering Hokkaido University

• Morifuji Masato

  Graduate School Of Engineering Osaka University

• Goto Hiroaki

  Graduate School Of Engineering Doshisha University

• Nakao Ryo

  Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Mochizuki Masaya

  Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Kukita Kentaro

  Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Nagatomo Hiroshi

  Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Nakano Katsunari

  Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Kondow Masahiko

  Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Morifuji Masato

  Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Goto Hiroaki

  Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

関連論文

• Amplified Spontaneous Enission Measurement of GaInNAs Laser Wafers With and without Rapid Thermal Annealing
• Variation in Photoluminescence of Highly Strained GaInNAs/GaAs Multiple-Quantum-Well Structures with Different Thickness GaAs Barrier Layers(Semiconductors)
• Transition of Infrared Absorption Peaks in Thermally Annealed GaInNAS : Optics and Quantum Electronics : Optical Properties of Condensed Matter
• Analysis of Band Offset in GaNAs/GaAs by X-Ray Photoelectron Spectroscopy
• Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GaIn N As/GaAs Single Quantum Well Laser Diode
• Index-Guide GaInNAs Laser Diode for Optical Communications
• Characterization of the Refractive Index of Strained GaInNAs Layers by Spectroscopic Ellipsometry
• Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance
• Nitrogen Gas Flow Driven Unintentional Incorporation of Al during the Growth of Dilute Nitride Semiconductor by Plasma-Assisted Molecular Beam Epitaxy
• Recent Progress in GaInNAs Laser(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
• A 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K
• A 1.3-μm GaInNAs Laser Diode with a Lifetime of over 1000 Hours
• Reduced Static Dielectric Constant Estimated from Exciton Binding Energy in Dilute Nitride Semiconductors
• Investigation of the Electron Nonradiative Transition in Extremely Thin GaInNAs/GaAs Single Quantum Well by Using a Piezoelectric Photothermal Spectroscopy
• Unintentional source incorporation in plasma-assisted molecular beam epitaxy
• Effect of plasma conditions on the growth of GaNAs by plasma-assisted molecular-beam epitaxy
• Polarized Raman Spectra and N-Related Local Vibrational Mode in GaNAs and GaInNAs Epitaxial Layers Grown on GaAs
• Infrared Absorption Spectrum of GaInNAs
• Excitation Intensity Dependence of Photoluminescence Spectra in GaInNAs Single Quantum Wells (Short Note)
• Index-Guide GaInNAs Laser Diode for Optical Communications
• Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication
• Reduction of $S$-parameter by the Introduction of Nitrogen in GaNAs: Positron Annihilation and Photoluminescence Spectroscopy Study
• A proposal of content viewing web system for DLNA devices in wide area network
• Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots
• Introduction of GaInNAs Gain Medium into Circularly Arranged Photonic Crystal Cavity
• Unintentional Source Incorporation in Plasma-Assisted Molecular Beam Epitaxy
• Over 1.5 μm Deep Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication
• Characterization of the Oxide Film Obtained by Wet Oxidation of Al-Rich AlGaAs
• Formation of Minibands on Superlattice Structure with Periodically Arranged \delta-Doped Nitrogen into GaAs
• Over 1.5μm Deep Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication (Special Issue : Solid State Devices and Materials)
• Formation of Minibands on Superlattice Structure with Periodically Arranged \delta-Doped Nitrogen into GaAs

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