Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication
スポンサーリンク
概要
- 論文の詳細を見る
We investigate inductively coupled plasma deep dry etching of Al0.8Ga0.2As for photonic crystal (PC) fabrication using Cl2, BCl3, and CH4 chemistry. The characteristic AlOx deposition is observed during the etching, resulting in the reduction of etching rate. BCl3 is considered to scavenge the deposited AlOx by its reductive reaction. CH4 passivates the etching sidewall, as well as enhances the deposition of AlOx. Concerning the impact of pattern size, a pronounced inverse reactive ion etching (RIE) lag is observed, which is beneficial for small-size PC fabrication typically with a hole diameter of 100--500 nm. From the findings, we successfully fabricated a PC structure with air holes having an aspect ratio of 8 and a diameter of 110 nm.
- 2011-04-25
著者
-
Kondow Masahiko
Graduate School Of Engineering Osaka University
-
Ishikawa Fumitaro
Graduate School Of Electronics And Information Engineering Hokkaido University
-
Hara Makoto
Graduate Student Aoyama Gakuin University
-
Aoki Hidemitsu
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
-
Aoki Hidemitsu
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
-
Kimura Chiharu
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
-
Kimura Chiharu
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
-
Sugino Takashi
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
-
Satoi Daiki
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
-
Sugino Takashi
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
-
Mochizuki Masaya
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
-
Kitabayashi Yuta
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
-
Nakajima Tomoya
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
-
Kondow Masahiko
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
-
Hara Makoto
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
関連論文
- Amplified Spontaneous Enission Measurement of GaInNAs Laser Wafers With and without Rapid Thermal Annealing
- Variation in Photoluminescence of Highly Strained GaInNAs/GaAs Multiple-Quantum-Well Structures with Different Thickness GaAs Barrier Layers(Semiconductors)
- Transition of Infrared Absorption Peaks in Thermally Annealed GaInNAS : Optics and Quantum Electronics : Optical Properties of Condensed Matter
- Analysis of Band Offset in GaNAs/GaAs by X-Ray Photoelectron Spectroscopy
- Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GaIn N As/GaAs Single Quantum Well Laser Diode
- Index-Guide GaInNAs Laser Diode for Optical Communications
- Characterization of the Refractive Index of Strained GaInNAs Layers by Spectroscopic Ellipsometry
- Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance
- Nitrogen Gas Flow Driven Unintentional Incorporation of Al during the Growth of Dilute Nitride Semiconductor by Plasma-Assisted Molecular Beam Epitaxy
- Recent Progress in GaInNAs Laser(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
- A 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K
- A 1.3-μm GaInNAs Laser Diode with a Lifetime of over 1000 Hours
- Reduced Static Dielectric Constant Estimated from Exciton Binding Energy in Dilute Nitride Semiconductors
- Investigation of the Electron Nonradiative Transition in Extremely Thin GaInNAs/GaAs Single Quantum Well by Using a Piezoelectric Photothermal Spectroscopy
- Unintentional source incorporation in plasma-assisted molecular beam epitaxy
- Effect of plasma conditions on the growth of GaNAs by plasma-assisted molecular-beam epitaxy
- Polarized Raman Spectra and N-Related Local Vibrational Mode in GaNAs and GaInNAs Epitaxial Layers Grown on GaAs
- Infrared Absorption Spectrum of GaInNAs
- Excitation Intensity Dependence of Photoluminescence Spectra in GaInNAs Single Quantum Wells (Short Note)
- Index-Guide GaInNAs Laser Diode for Optical Communications
- Photoelastic Determination of Stress Intensity Factor Using Function Approximation Method
- FUNCTIONAL APPROXIMATON METHOD FOR ANALYSIS OF COLLAPSED PHOTOELASTIC IMAGE DATA AROUND STRESS SINGULARITY
- Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication
- Influences of Intensity of Electric Field on Properties of Poly(vinylidene fluoride--tetrafluoroethylene) Thin Films during Annealing Process
- Reduction of $S$-parameter by the Introduction of Nitrogen in GaNAs: Positron Annihilation and Photoluminescence Spectroscopy Study
- Very Smooth SiO2/SiC Interface Formed by Supercritical Water Oxidation at Low Temperature
- Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots
- Low-Temperature and Rapid Oxidation of GaN Surface by Saturated Water Vapor at High Pressure
- Introduction of GaInNAs Gain Medium into Circularly Arranged Photonic Crystal Cavity
- Unintentional Source Incorporation in Plasma-Assisted Molecular Beam Epitaxy
- Effects of an Electric Field and a Solvent during Thermal Treatment in Film Formation of Poly(vinylidene fluoride–tetrafluoroethylene)
- Over 1.5 μm Deep Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication
- Characterization of the Oxide Film Obtained by Wet Oxidation of Al-Rich AlGaAs
- Formation of Minibands on Superlattice Structure with Periodically Arranged \delta-Doped Nitrogen into GaAs
- Over 1.5μm Deep Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication (Special Issue : Solid State Devices and Materials)
- Formation of Minibands on Superlattice Structure with Periodically Arranged \delta-Doped Nitrogen into GaAs