Transition of Infrared Absorption Peaks in Thermally Annealed GaInNAS : Optics and Quantum Electronics : Optical Properties of Condensed Matter
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-07-15
著者
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Kondow M
Central Research Laboratory Hitachi Ltd.
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KUDO Makoto
Central Research Laboratory, Hitachi, Ltd.
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KITATANI Takeshi
RWCP Optical Interconnection Hitachi Laboratory co Central Research Laboratory, Hitachi, Ltd.
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KONDOW Masahiko
RWCP Optical Interconnection Hitachi Laboratory co Central Research Laboratory, Hitachi, Ltd.
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Kondow M
Hitachi Ltd. Tokyo Jpn
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Kondow Masahiko
Graduate School Of Engineering Osaka University
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Kondow Masahiko
Rwcp Optical Interconnection Hitachi Laboratory C-o Central Research Laboratory Hitachi Ltd.
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Kudo Makoto
Central Research Lab. Hitachi Ltd.
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Kitatani T
Hitachi Ltd. Central Research Laboratory
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Kitatani Takeshi
Rwcp Optical Interconnection Hitachi Laboratory C-o Central Research Laboratory Hitachi Ltd.
関連論文
- Amplified Spontaneous Enission Measurement of GaInNAs Laser Wafers With and without Rapid Thermal Annealing
- Variation in Photoluminescence of Highly Strained GaInNAs/GaAs Multiple-Quantum-Well Structures with Different Thickness GaAs Barrier Layers(Semiconductors)
- Transition of Infrared Absorption Peaks in Thermally Annealed GaInNAS : Optics and Quantum Electronics : Optical Properties of Condensed Matter
- Analysis of Band Offset in GaNAs/GaAs by X-Ray Photoelectron Spectroscopy
- Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GaIn N As/GaAs Single Quantum Well Laser Diode
- Index-Guide GaInNAs Laser Diode for Optical Communications
- Characterization of the Refractive Index of Strained GaInNAs Layers by Spectroscopic Ellipsometry
- Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance
- Nitrogen Gas Flow Driven Unintentional Incorporation of Al during the Growth of Dilute Nitride Semiconductor by Plasma-Assisted Molecular Beam Epitaxy
- Low-Lattice-Strain Long-Wavelength GaAsSb/GaInAs Type-II Quantum Wells Grown on GaAs Substrates
- Gas-Source Molecular Beam Epitaxy Growth of Metamorphic InP/In_Al_As/In_Ga_As/InAsP High-Electron-Mobility Structures on GaAs Substrates
- Dry Etching Damage and Activation Ratio Degradation in δ-Doped AlGaAs/InGaAs High Electron Mobility Transistors
- Enhanced Electron Mobility in the Inverted High Electron Mobility Transistor Structure by Two-Step Molecular Beam Epitaxy (MBE) Growth
- Single and Double δ-Doped Al_Ga_As/In_Ga_As Pseudomorphic Heterostructures Grown by Molecular-Beam Epitaxy
- InAsSb Quantum Dots Grown on GaAs Substrates by Molecular Beam Epitaxy
- InAlAs/InGaAs HEMTs with Uniform Threshold Voltage Fabricated by Selective Wet-Etching Using Adipic Acid
- High-Performance In_Al_As/In_Ga_As High Electron Mobility Transistors on GaAs
- Highly Selective Wet-Etching Using Adipic Acid for Uniform Damage-Free Process of InAlAs/InGaAs HEMTs
- Recent Progress in GaInNAs Laser(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
- A 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K
- A 1.3-μm GaInNAs Laser Diode with a Lifetime of over 1000 Hours
- Chemical State Analysis of Silicon-Oxygen Compounds : CHEMICAL APPLICATIONS
- Photocurrent and Photoluminescence in InGaAs/GaAs Multiple Quantum Well Solar Cells
- Vertical Transport Properties of Photogenerated Carrier in InGaAs/GaAs Strained Multiple Quantum Welts
- Reduced Static Dielectric Constant Estimated from Exciton Binding Energy in Dilute Nitride Semiconductors
- Fabrication of InAlAs/InGaAs High-Electron-Mobility Transistors Using ArF-Excimer-Laser-Assisted Damage-Free Highly Selective InGaAs/InAlAs Etching
- Investigation of the Electron Nonradiative Transition in Extremely Thin GaInNAs/GaAs Single Quantum Well by Using a Piezoelectric Photothermal Spectroscopy
- Unintentional source incorporation in plasma-assisted molecular beam epitaxy
- Effect of plasma conditions on the growth of GaNAs by plasma-assisted molecular-beam epitaxy
- Polarized Raman Spectra and N-Related Local Vibrational Mode in GaNAs and GaInNAs Epitaxial Layers Grown on GaAs
- Infrared Absorption Spectrum of GaInNAs
- Excitation Intensity Dependence of Photoluminescence Spectra in GaInNAs Single Quantum Wells (Short Note)
- Index-Guide GaInNAs Laser Diode for Optical Communications
- GaInNAs:A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
- Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication
- 1.45 μm Intersubband Absorption in InGaAs/AlAsSb Grown by Molecular Beam Epitaxy
- Improved Electron Mobility of AlInSb/InAsSb/AlInSb Heterostructures Grown Lattice-Mismatched on GaAs Substrates
- Electron Beam Brightness from Negative-Electron-Affinity Photocathodes for Scanning Electron Microscopy Application
- Reduction of $S$-parameter by the Introduction of Nitrogen in GaNAs: Positron Annihilation and Photoluminescence Spectroscopy Study
- Characterization of the Refractive Index of Lateral-Oxidation-Formed Al_xO_y by Spectroscopic Ellipsometry
- In situ Annealing of GaInNAs up to 600°C
- Electron Beam Brightness from Negative-Electron-Affinity Photocathodes for Scanning Electron Microscopy Application
- Introduction of GaInNAs Gain Medium into Circularly Arranged Photonic Crystal Cavity
- Unintentional Source Incorporation in Plasma-Assisted Molecular Beam Epitaxy
- GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
- Increased Hole Mobility of p-GaSb/GaAs Short-Period Superlattices Grown on InP Substrates
- Amplified Spontaneous Emission Measurement of GaInNAs Laser Wafers with and without Rapid Thermal Annealing
- Over 1.5 μm Deep Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication
- Characterization of the Oxide Film Obtained by Wet Oxidation of Al-Rich AlGaAs
- Over 1.5μm Deep Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication (Special Issue : Solid State Devices and Materials)