1.45 μm Intersubband Absorption in InGaAs/AlAsSb Grown by Molecular Beam Epitaxy

スポンサーリンク

概要

• 論文の詳細を見る

• InGaAs/AlAsSb multi-quantum wells lattice matched to InP substrates have been grown by molecular beam epitaxy, and the intersubband transitions in doped quantum welts have been studied. By precisely controlling the As to Sb flux ratio and substrate temperature, fairly abrupt interfaces with 1-2 monolayers of compositionary varying layers in both heterointerfaces have been achieved as confirmed from the high-resolution transmission electron microscopy (HRTEM) lattice images. Polarization-resolved absorption spectra were measured either with a conventional optical absorption measurement system or a Fourier-transform infrared spectrometer. We have observed an intersubband transition as short as 1.45 μm (0.85 eV) in 2.0-nm-thick InGaAs/AlAsSb quantum wells. This is the shortest quantum well intersubband transition ever reported in any materials system.

• 社団法人応用物理学会の論文
• 1999-02-28

著者

• KUDO Makoto

  Central Research Laboratory, Hitachi, Ltd.

• YOSHIDA Hidetsugu

  Institute of Laser Engineering, Osaka University

• YOSHIDA Haruhiko

  FESTA Laboratories, The Femtosecond Technology Research Association

• NEOGI Arup

  FESTA Laboratories, The Femtosecond Technology Research Association

• MOZUME Teruo

  FESTA Laboratories, The Femtosecond Technology Research Association

• NEOGI Arup

  The Femtosecond Technology Research Association

• Yoshida Hidemi

  Thin Films Laboratory Research Center Mitsubishi Kasei Corporation

• Kudo Makoto

  Central Research Lab. Hitachi Ltd.

• Mozume T

  National Institute Of Advanced Industrial Science And Technology (aist)

• Yoshida Haruhiko

  FESTA Laboratories, Femtosecond Technology Research Association, 5-5 Tokodai, Tsukuba 300-2635, Japan

• Mozume Teruo

  FESTA Laboratories, Femtosecond Technology Research Association, 5-5 Tokodai, Tsukuba 300-2635, Japan

関連論文

• Amplified Spontaneous Enission Measurement of GaInNAs Laser Wafers With and without Rapid Thermal Annealing
• Variation in Photoluminescence of Highly Strained GaInNAs/GaAs Multiple-Quantum-Well Structures with Different Thickness GaAs Barrier Layers(Semiconductors)
• Transition of Infrared Absorption Peaks in Thermally Annealed GaInNAS : Optics and Quantum Electronics : Optical Properties of Condensed Matter
• Laser-Induced Bulk Damage of Various Types of Silica Glasses at 266nm
• Substrate Dependence of Laser-Induced Damage Threshold of Scandium Oxide High-Reflector Coatings for UV Pulsed Laser
• Influence of Deposition Parameters on Laser Damage Threshold of 355-nm Scandium Oxide-Magnesium Fluoride High-Reflector Coatings
• Self-Controlled Short Pulse Generator from All-Fiber Coupled Fabry-Perot Cavity(Lasers, Quantum Electronics)
• Laser-Induced Bulk Damage of Various Types of Silica Glasses at 532 and 355nm
• Ion Etching of Fused Silica Glasses for High-Power Lasers
• Laser-Induced Bulk Damage of Various Types of Silica Glasses with Fundamental and Higher Harmonics of Nd : YAG Laser
• Absorption Saturation of Intersubband Transition in InGaAs/AlAsSb Quantum Well Characterized by Absorption Spectral Analysis(Semiconductors)
• Temperature-Insensitive Intersubband-Transitions in InGaAs/AlAsSb Multiple Quantum Well Designed for Optical Communication Wavelength : Optical Properties of Condensed Matter
• Efficient All-Optical Interband Light Modulation by Ultrafast Manipulation of Intersubband Transitions in an Asymmetric Quantum Well
• High-Density Pulse Width Modulation Recording and Rewritable Capability in GeSbTe Phase-Change System Using Visible Laser Beam at Low Linear Velocity
• Two-Beam-Combined 7.4J, 50Hz Q-switch Pulsed YAG Laser System Based on SBS Phase Conjugation Mirror for Plasma Diagnostics
• Generation of High Efficiency 2μm Laser Pulse from a Periodically Poled 5mol% MgO-Doped LiNbO_3 Optical Parametric Oscillator
• Thermally Induced Birefringence Compensation in High Average Power Nd:YAG Laser
• Thermal-Lens-Effect Compensation of Nd:YAG Rod Laser Using a Solid Element of Negative Temperature Coefficient of Refractive Index
• Compact Temporal-Pulse-Compressor Used in Fused-Silica Glass at 1064nm Wavelength
• Self-Starting Pulse Generation from Cooled Erbium-Doped Fiber Ring Laser(Lasers, Quantum Electronics)
• Temporal Compression by Stimulated Brillouin Scattering of Q-switched Pulse with Fused Quartz Glass
• High Resistant Phase-conjugated Stimulated Brillouin Scattering Mirror Using Fused-silica Glass for Nd:YAG Laser System
• Complex SBS & BFWM related characteristics of fluorocarbon liquids
• Low-Lattice-Strain Long-Wavelength GaAsSb/GaInAs Type-II Quantum Wells Grown on GaAs Substrates
• Gas-Source Molecular Beam Epitaxy Growth of Metamorphic InP/In_Al_As/In_Ga_As/InAsP High-Electron-Mobility Structures on GaAs Substrates
• Dry Etching Damage and Activation Ratio Degradation in δ-Doped AlGaAs/InGaAs High Electron Mobility Transistors
• Enhanced Electron Mobility in the Inverted High Electron Mobility Transistor Structure by Two-Step Molecular Beam Epitaxy (MBE) Growth
• Single and Double δ-Doped Al_Ga_As/In_Ga_As Pseudomorphic Heterostructures Grown by Molecular-Beam Epitaxy
• Improvement of Magnetostatic Coupling in Reversal Magnetically Induced Superresolution
• Ultralow Intersubband Absorption Saturation Intensity at Communication Wavelength Achieved in Novel Strain Compensated InGaAs/AlAs/AlAsSb Quantum Wells Grown by Molecular Beam Epitaxy
• InAsSb Quantum Dots Grown on GaAs Substrates by Molecular Beam Epitaxy
• InAlAs/InGaAs HEMTs with Uniform Threshold Voltage Fabricated by Selective Wet-Etching Using Adipic Acid
• High-Performance In_Al_As/In_Ga_As High Electron Mobility Transistors on GaAs
• Highly Selective Wet-Etching Using Adipic Acid for Uniform Damage-Free Process of InAlAs/InGaAs HEMTs
• Bulk Laser Damage in CsLiB_6O_ Crystal and Its Dependence on Crystal Structure
• 1-V Josephson-Junction-Array Voltage Standard and Development of 10-V Josephson Junction Array at ETL
• Use of the Josephoson Junction Array Voltage Standard in Industry
• Chemical State Analysis of Silicon-Oxygen Compounds : CHEMICAL APPLICATIONS
• Effect of Overcoat Layer on Highly Reflective Coating for High-Average-Power Lasers
• Development of Newly Designed Polarizer for High-Power Laser
• Ultrafast All-Optical Switching and Modulation Using Intersubband Transitions in Coupled Quantum Well Structures(Ultrafast Photonics)
• Laser Oscillation of Nd-Doped Silica Glass with High Thermal Shock Parameter
• Development of Nd-doped Optical Gain Material Based on Silica Glass with High Thermal Shock Parameter for High-Average-Power Laser
• Fabrication of InAlAs/InGaAs High-Electron-Mobility Transistors Using ArF-Excimer-Laser-Assisted Damage-Free Highly Selective InGaAs/InAlAs Etching
• 1.45 μm Intersubband Absorption in InGaAs/AlAsSb Grown by Molecular Beam Epitaxy
• Improved Electron Mobility of AlInSb/InAsSb/AlInSb Heterostructures Grown Lattice-Mismatched on GaAs Substrates
• Electron Beam Brightness from Negative-Electron-Affinity Photocathodes for Scanning Electron Microscopy Application
• Precise Angle and Position Detection Utilizing Optical Interference on Metal-Oxide-Semiconductor-Type Position-Sensitive Detectors
• Chemical Composition of Al_2O_3/InP Metal-Insulator-Semiconductor Interfaces Improved by Plasma and Ultraviolet Oxidation
• Measurement of Stimulated Brillouin Scattering Characteristics in Heavy Fluorocarbon Liquids and Perfluoropolyether Liquids
• Simulation of Temporal Waveform Control of Laser Pulse by Frequency Chirping
• MOS-Type One-Dimensional Position-Sensitive Detectors with a Linearly Delectable Face of 30 mm Long
• ICTS of MOS Interface States Enhanced by Gold Diffusion
• Electron Beam Brightness from Negative-Electron-Affinity Photocathodes for Scanning Electron Microscopy Application
• Ultralow Intersubband Absorption Saturation Intensity at Communication Wavelength Achieved in Novel Strain Compensated InGaAs/AlAs/AlAsSb Quantum Wells Grown by Molecular Beam Epitaxy
• Increased Hole Mobility of p-GaSb/GaAs Short-Period Superlattices Grown on InP Substrates
• Amplified Spontaneous Emission Measurement of GaInNAs Laser Wafers with and without Rapid Thermal Annealing

もっと見る 閉じる

スポンサーリンク