Ultralow Intersubband Absorption Saturation Intensity at Communication Wavelength Achieved in Novel Strain Compensated InGaAs/AlAs/AlAsSb Quantum Wells Grown by Molecular Beam Epitaxy
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概要
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We have markedly improved the optical properties of extremely thin quantum wells (QWs) required for ISBT devices operating at optical communication wavelengths using novel InGaAs/AlAs/AlAsSb QW structures with 4–7 monolayers (MLs) of AlAs. The intersubband saturation intensity (Is) was reduced to 3 fJ/μm2. This represented an $I_{\text{S}}$ reduction of nearly 3 orders of magnitude relative to that of the previous samples, whether or not the sample had a 1-ML AlAs interface. In this paper, we report the properties of novel InGaAs/AlAs/AlAsSb quantum wells grown by molecular beam epitaxy, and discuss the linear and nonlinear optical responses of ISBT.
- 2003-09-15
著者
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Georgiev Nikolai
Festa Laboratories Femtosecond Technology Research Association
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MOZUME Teruo
FESTA Laboratories, The Femtosecond Technology Research Association
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Kasai Jun-ichi
Festa Laboratories The Femtosecond Technology Research Association
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Simoyama Takasi
Festa Laboratories The Femtosecond Technology Research Association
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Yoshida Haruhiko
FESTA Laboratories, Femtosecond Technology Research Association, 5-5 Tokodai, Tsukuba 300-2635, Japan
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Georgiev Nikolai
FESTA Laboratories, Femtosecond Technology Research Association, 5-5 Tokodai, Tsukuba 300-2635, Japan
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Gopal Achanta
FESTA Laboratories, Femtosecond Technology Research Association, 5-5 Tokodai, Tsukuba 300-2635, Japan
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Kasai Jun-ichi
FESTA Laboratories, Femtosecond Technology Research Association, 5-5 Tokodai, Tsukuba 300-2635, Japan
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Mozume Teruo
FESTA Laboratories, Femtosecond Technology Research Association, 5-5 Tokodai, Tsukuba 300-2635, Japan
関連論文
- Absorption Saturation of Intersubband Transition in InGaAs/AlAsSb Quantum Well Characterized by Absorption Spectral Analysis(Semiconductors)
- Temperature-Insensitive Intersubband-Transitions in InGaAs/AlAsSb Multiple Quantum Well Designed for Optical Communication Wavelength : Optical Properties of Condensed Matter
- Efficient All-Optical Interband Light Modulation by Ultrafast Manipulation of Intersubband Transitions in an Asymmetric Quantum Well
- Ultralow Intersubband Absorption Saturation Intensity at Communication Wavelength Achieved in Novel Strain Compensated InGaAs/AlAs/AlAsSb Quantum Wells Grown by Molecular Beam Epitaxy
- Ultrafast All-Optical Switching and Modulation Using Intersubband Transitions in Coupled Quantum Well Structures(Ultrafast Photonics)
- 1.45 μm Intersubband Absorption in InGaAs/AlAsSb Grown by Molecular Beam Epitaxy
- Ultralow Intersubband Absorption Saturation Intensity at Communication Wavelength Achieved in Novel Strain Compensated InGaAs/AlAs/AlAsSb Quantum Wells Grown by Molecular Beam Epitaxy