Absorption Saturation of Intersubband Transition in InGaAs/AlAsSb Quantum Well Characterized by Absorption Spectral Analysis(Semiconductors)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-10-01
著者
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Wada Osamu
FESTA Laboratories
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Georgiev N
Femtosecond Technol. Res. Assoc. Tsukuba Jpn
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Georgiev Nikolai
Festa Laboratories Femtosecond Technology Research Association
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Wada Osamu
The Femtosecond Technology Research Association
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Wada O
The Femtosecond Technology Research Association:the Kobe University.
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GOPAL Achanta
FESTA Laboratories, The Femtosecond Technology Research Association
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YOSHIDA Haruhiko
FESTA Laboratories, The Femtosecond Technology Research Association
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NEOGI Arup
FESTA Laboratories, The Femtosecond Technology Research Association
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MOZUME Teruo
FESTA Laboratories, The Femtosecond Technology Research Association
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ISHIKAWA Hiroshi
FESTA Laboratories, The Femtosecond Technology Research Association
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NEOGI Arup
The Femtosecond Technology Research Association
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Gopal Achanta
Nec Corporation
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Mozume T
National Institute Of Advanced Industrial Science And Technology (aist)
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Ishikawa H
Fukuyama Univ. Hiroshima Jpn
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Yoshida Haruhiko
FESTA Laboratories, Femtosecond Technology Research Association, 5-5 Tokodai, Tsukuba 300-2635, Japan
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Gopal Achanta
FESTA Laboratories, Femtosecond Technology Research Association, 5-5 Tokodai, Tsukuba 300-2635, Japan
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Mozume Teruo
FESTA Laboratories, Femtosecond Technology Research Association, 5-5 Tokodai, Tsukuba 300-2635, Japan
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