Lateral-Coupling-Induced Modification of Density of States and Exciton Dynamics in High-Density Ordered In_<0.4> Ga_<0.6> As/GaAs(311)B Quantum Dot Arrays(Optical Properties of Condensed Matter)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-06-15
著者
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Wada Osamu
Materials & Electronic Device Laboratory Mitsubishi Electric Corporation
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Wada Osamu
FESTA Laboratories
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Lan S
The Femtosecond Technology Research Association (festa).
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Wada O
The Department Of Electrical And Electronics Engineering Kobe University
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Wada Osamu
The Femtosecond Technology Research Association
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Wada Osamu
Fujitsu Laboratories
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Wada O
The Femtosecond Technology Research Association:the Kobe University.
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Kawabe M
Nikko Materials Co. Ltd. Saitama Jpn
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Kawabe Mitsuo
Institute Of Materials Science University Of Tsukuba
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Kawabe Mitsuo
Institute Of Applied Physics University Of Tsukuba
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NISHIKAWA Satoshi
The Femtosecond Technology Research Association (FESTA)
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LAN Sheng
The Femtosecond Technology Research Association (FESTA)
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NISHlMURA Tetsuya
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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AKAHANE Kouichi
Institute of Applied Physics, University of Tsukuba
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Lan Sheng
Institute Of Applied Physics University Of Tsukuba
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Nishikawa Satoshi
The Femtosecond Technology Research Association (festa).
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Nishimura Tadashi
Lsi Research & Development Laboratory Mitsubishi Electric Corporation
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Wada Osamu
The Femtosecond Technology Research Association:the Kobe University.
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Nishimura T
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Kawabe M
Institute Of Applied Physics University Of Tsukuba
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Akahane K
Institute Of Applied Physics University Of Tsukuba
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Nishikawa S
The Femtosecond Technology Research Association (festa).
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Niina T
Microelectronics Research Center Sanyo Electric Co. Ltd.
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